型号 功能描述 生产厂家&企业 LOGO 操作
TSM1N60

N-ChannelPowerEnhancementModeMOSFET

VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8Ω GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

N-ChannelPowerEnhancementModeMOSFET

VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8Ω GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

N-ChannelPowerEnhancementModeMOSFET

VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8Ω GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

N-ChannelPowerEnhancementModeMOSFET

GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

N-ChannelPowerEnhancementModeMOSFET

GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

N-ChannelPowerEnhancementModeMOSFET

GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-ChannelPowerEnhancementModeMOSFET

GeneralDescription TheTSM1N60Sisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergye

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

N-ChannelPowerEnhancementModeMOSFET

GeneralDescription TheTSM1N60Sisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergye

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

N-ChannelPowerEnhancementModeMOSFET

GeneralDescription TheTSM1N60Sisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergye

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

N-Channel650V(D-S)MOSFET

文件:1.08797 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

600VN-ChannelPowerMOSFET

文件:406.46 Kbytes Page:7 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

600VN-ChannelPowerMOSFET

文件:406.46 Kbytes Page:7 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

600VN-ChannelPowerMOSFET

文件:311.14 Kbytes Page:7 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

600VN-ChannelPowerMOSFET

文件:406.46 Kbytes Page:7 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

600VN-ChannelPowerMOSFET

文件:311.14 Kbytes Page:7 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

600VN-ChannelPowerMOSFET

文件:406.46 Kbytes Page:7 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

600VN-ChannelPowerMOSFET

文件:311.14 Kbytes Page:7 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

600VN-ChannelPowerMOSFET

文件:371.46 Kbytes Page:6 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

600VN-ChannelPowerMOSFET

文件:371.46 Kbytes Page:6 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

600VN-ChannelPowerMOSFET

文件:381.92 Kbytes Page:8 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

600VN-ChannelPowerMOSFET

文件:371.46 Kbytes Page:6 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

600VN-ChannelPowerMOSFET

文件:381.92 Kbytes Page:8 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

600VN-ChannelPowerMOSFET

文件:381.92 Kbytes Page:8 Pages

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

1.2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA

JEDECDO-7PACKAGE

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

GOLDBONDEDGERMANIUMDIODE

GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors

FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi

Littelfuselittelfuse

力特力特公司

Littelfuse

TSM1N60产品属性

  • 类型

    描述

  • 型号

    TSM1N60

  • 制造商

    Taiwan Semiconductor

  • 功能描述

    MOSFET N 600V D-PAK

更新时间:2025-7-9 20:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TSC
18+
TO-92
950
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TSC/台湾半导体
22+
TO-92
100000
代理渠道/只做原装/可含税
TAIWAN SEMONDUCTOR
24+
NA/
13282
原厂直销,现货供应,账期支持!
TSC/台湾半导体
22+
TO252-2
25000
只做原装进口现货,专注配单
TSC/台湾半导体
22+
SOT-252
20000
保证原装正品,假一陪十
TOSHIBA
22+
TO252-
3000
原装正品,支持实单
TSC
24+
TO251
11000
原装正品 有挂有货 假一赔十
SEMTECH
2025+
TO-251
4835
全新原厂原装产品、公司现货销售
TSC
23+
TO-251
8650
受权代理!全新原装现货特价热卖!
2023+
5800
进口原装,现货热卖

TSM1N60芯片相关品牌

  • Catalyst
  • CUI
  • CUID
  • Everlight
  • FORYARD
  • HIROSE
  • Nanya
  • Toko
  • TOPPOWER
  • TOREX
  • UNSEMI
  • VCC

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