N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

N-Channel Power Enhancement Mode MOSFET

N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

N-Channel Power Enhancement Mode MOSFET

General Description The TSM1N60L is used an advanced termination schemeto provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficien

N-Channel Power Enhancement Mode MOSFET

General Description The TSM1N60L is used an advanced termination schemeto provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficien

N-Channel Power Enhancement Mode MOSFET

General Description The TSM1N60L is used an advanced termination schemeto provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficien

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

N-Channel Power Enhancement Mode MOSFET

General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstandhigh energy in avalanche and commutation modes. The new energy e

N-Channel Power Enhancement Mode MOSFET

General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstandhigh energy in avalanche and commutation modes. The new energy e

N-Channel Power Enhancement Mode MOSFET

General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstandhigh energy in avalanche and commutation modes. The new energy e

N-Channel 650 V (D-S) MOSFET

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N-Channel Power Enhancement Mode MOSFET

600V N-Channel Power MOSFET

文件：406.46 Kbytes Page：7 Pages

600V N-Channel Power MOSFET

文件：406.46 Kbytes Page：7 Pages

600V N-Channel Power MOSFET

文件：311.14 Kbytes Page：7 Pages

600V N-Channel Power MOSFET

文件：406.46 Kbytes Page：7 Pages

600V N-Channel Power MOSFET

文件：311.14 Kbytes Page：7 Pages

600V N-Channel Power MOSFET

文件：406.46 Kbytes Page：7 Pages

600V N-Channel Power MOSFET

文件：311.14 Kbytes Page：7 Pages

600V N-Channel Power MOSFET

文件：371.46 Kbytes Page：6 Pages

600V N-Channel Power MOSFET

文件：371.46 Kbytes Page：6 Pages

600V N-Channel Power MOSFET

文件：381.92 Kbytes Page：8 Pages

600V N-Channel Power MOSFET

600V N-Channel Power MOSFET

文件：371.46 Kbytes Page：6 Pages

600V N-Channel Power MOSFET

文件：381.92 Kbytes Page：8 Pages

600V N-Channel Power MOSFET

文件：381.92 Kbytes Page：8 Pages

1.2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

GOLD BONDED GERMANIUM DIODE

Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance

Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors

FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di