位置：首页 > IC中文资料第7006页 > TSM1N60LCP
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TSM1N60LCP | N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 |  |   |
TSM1N60LCP | 600VN-ChannelPowerMOSFET 文件：406.46 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | |
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
600VN-ChannelPowerMOSFET 文件：311.14 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi | Littelfuselittelfuse 力特力特公司 |  | | |
SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | | |
JEDECDO-7PACKAGE JEDECDO-7PACKAGE | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | |
TSM1N60LCP产品属性
- 类型
描述
- 型号
TSM1N60LCP
- 功能描述
MOSFET 600V 1A N channel MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC |
24+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
TSC/台湾半导体 |
24+ |
NA/ |
6663 |
原装现货,当天可交货,原型号开票 |
|||
TSC/台湾半导体 |
22+ |
TO-92 |
100000 |
代理渠道/只做原装/可含税 |
|||
TSC |
06+ |
TO-252 |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TAIWAN SEMI |
24+ |
NA |
12000 |
原装 |
|||
TAIWAN SEMI |
22+23+ |
NA |
8000 |
新到现货，只做原装进口 |
|||
TOSHIBA |
22+ |
TO252- |
3000 |
原装正品,支持实单 |
|||
TAIWAN SEMI |
24+ |
NA |
5000 |
全新原装正品,现货销售 |
|||
TSC |
24+ |
TO-92 |
56000 |
公司进口原装现货 批量特价支持 |
|||
TSC |
24+ |
TO-92 |
950 |
只做原装进口!正品支持实单! |
TSM1N60LCP芯片相关品牌
TSM1N60LCP规格书下载地址
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TSM1N60LCP数据表相关新闻
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TSM1A473F39H1RZ，当天发货0755-82732291全新原装现货或门市自取.
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TSM2A103F3951RZ，全新原装当天发货或门市自取0755-82732291.
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TSM1A473F39H1RZ，全新原装当天发货或门市自取0755-82732291.
2019-9-29TSM1A104F4051
TSM1A104F4051，全新原装当天发货或门市自取0755-82732291.
2019-9-29
DdatasheetPDF页码索引
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