N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

600V N-Channel Power MOSFET

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GOLD BONDED GERMANIUM DIODE

Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance

Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors

FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

1.2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow