位置：首页 > IC中文资料第4389页 > TSM1N60SCT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TSM1N60SCT | 600VN-ChannelPowerMOSFET 文件：371.46 Kbytes Page：6 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 |  |   |
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Sisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergye | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Sisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergye | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
600VN-ChannelPowerMOSFET 文件：381.92 Kbytes Page：8 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
600VN-ChannelPowerMOSFET 文件：381.92 Kbytes Page：8 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi | Littelfuselittelfuse 力特力特公司 |  | | |
SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | | |
JEDECDO-7PACKAGE JEDECDO-7PACKAGE | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | |
TSM1N60SCT产品属性
- 类型
描述
- 型号
TSM1N60SCT
- 功能描述
MOSFET 600V 1A N channel MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC/台湾半导体 |
23+ |
TO-92 |
50000 |
全新原装正品现货,支持订货 |
|||
TSC |
24+ |
TO-92 |
56000 |
公司进口原装现货 批量特价支持 |
|||
TSC |
20+ |
TO-92 |
950 |
进口原装现货,假一赔十 |
|||
TSC |
24+ |
TO-92 |
950 |
只做原装进口!正品支持实单! |
|||
TSC/台湾半导体 |
2022+ |
SOT-223 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
TSC/台湾半导体 |
22+ |
TO-92 |
100000 |
代理渠道/只做原装/可含税 |
|||
TSC |
1715+ |
SOP |
251156 |
只做原装正品现货假一赔十! |
|||
TSC/台湾半导体 |
24+ |
NA/ |
4200 |
原装现货,当天可交货,原型号开票 |
|||
TSC |
18+ |
TO-92 |
950 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TSC/台湾半导体 |
20+ |
SOT-223 |
32500 |
现货很近!原厂很远!只做原装 |
TSM1N60SCT芯片相关品牌
TSM1N60SCT规格书下载地址
TSM1N60SCT参数引脚图相关
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TSM1N60SCT数据表相关新闻
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2021-11-26TSM1A473F39H1RZ
TSM1A473F39H1RZ，当天发货0755-82732291全新原装现货或门市自取.
2020-10-6TSM2A103F3951RZ
TSM2A103F3951RZ，全新原装当天发货或门市自取0755-82732291.
2020-3-12TSM1A473F39H1RZ
TSM1A473F39H1RZ，全新原装当天发货或门市自取0755-82732291.
2019-9-29TSM1A104F4051
TSM1A104F4051，全新原装当天发货或门市自取0755-82732291.
2019-9-29
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