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型号	功能描述	生产厂家企业	LOGO
TPS7H2211	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211EVM-CVAL	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211EVM-CVAL	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211EVM-CVAL	TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211EVM-CVAL	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211HKR/EM	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211HKR/EM	TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211HKR/EM	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211HKR/EM	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211HKRSLASHEM	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211HKRSLASHEM	TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211HKRSLASHEM	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211HKRSLASHEM	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211HKRSLASHEM.Z	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211MDAPTSEP	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211MDAPTSEP	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211MDAPTSEP	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211-SEP	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211-SEP	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211-SEP	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211-SP	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211-SP	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211-SP	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211-SP	TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211-SP_V01	TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211-SP_V02	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211-SP_V03	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211Y/EM	TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211Y/EM	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211Y/EM	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211YSLASHEM	TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211YSLASHEM	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
TPS7H2211YSLASHEM	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI
TPS7H2211EVM-CVAL	描述：EVAL BOARD FOR TPS7H2211-SP 开发板，套件，编程器评估和演示板及套件	TI 德州仪器	TI
TPS7H2211EVM-CVAL	TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 文件：1.8583 Mbytes Page：41 Pages	TI 德州仪器	TI
TPS7H2211HKR/EM	TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 文件：1.8583 Mbytes Page：41 Pages	TI 德州仪器	TI
TPS7H2211HKRSLASHEM	TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 文件：1.8583 Mbytes Page：41 Pages	TI 德州仪器	TI
TPS7H2211-SEP	抗辐射 4.5V 至 14V 输入 3.5A 电子保险丝	TI 德州仪器	TI
TPS7H2211-SP	Radiation-hardness-assured (RHA), 4.5-V to 14-V input, 3.5-A load switch and eFuse	TI 德州仪器	TI
TPS7H2211-SP	TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 文件：1.8583 Mbytes Page：41 Pages	TI 德州仪器	TI
PTPS7H2211DAPTSEP	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy	TI 德州仪器	TI
PTPS7H2211DAPTSEP	TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t	TI 德州仪器	TI

TPS7H2211供应商更多...

更新时间：2025-12-8 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	TPS7H3301-SP	TI(德州仪器)	24+	NA/	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市煦洪科技有限公司	TPS7H2211MDAPTSEP	TI/德州仪器	25+	原厂封装	10280	原厂授权代理,专注军工、汽车、医疗、工业、新能源！	询价
深圳市祥瑞智科技有限公司	TPS7H2211Y/EM	TI	25+	(KGD)	6000	原厂原装,价格优势	询价
深圳市羿芯诚电子有限公司	TPS7H3301-RHA	TI/德州仪器	24+	CFP16	1500	只供应原装正品欢迎询价	询价
深圳市赛特兴科技有限公司	TPS7H3301HKR/EM	TI/德州仪器	23+	CFP-16	9990	正规渠道,只有原装!	询价
深圳市星佑电子有限公司	TPS7H3301HKR/EM	TI	18+	原厂原装假一赔十	26	原厂很远现货很近,找现货选星佑电子,原厂原装假一赔	询价
深圳市东来宝电子科技有限公司	TPS7H2211HKR/EM	TI	25+	原封装	66330	郑重承诺只做原装进口现货	询价
深圳市恒创达实业有限公司	TPS7H3301HKR/EM	TI	16+	原厂封装	29	宇航IC只做原装假一罚十	询价
深圳市宇集芯电子有限公司	TPS7H3301HKR/EM	TI	24+	N/A	90000	原厂正规渠道现货、保证原装正品价格合理	询价
深圳诚思涵科技有限公司	TPS7H3301HKR/EM	TI/德州仪器	20+	CFP-16	5000	原厂原装订货诚易通正品现货会员认证企业	询价

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TPS7H2211供应商更多...

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TPS7B8250QDGNRQ1公司原装现货价格优势出