| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TPS7H2211 | TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 |  |   |
TPS7H2211 | TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TITexas Instruments 德州仪器美国德州仪器公司 |  | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | | |
描述：EVAL BOARD FOR TPS7H2211-SP 开发板，套件，编程器 评估和演示板及套件 | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 文件：1.8583 Mbytes Page：41 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 文件：1.8583 Mbytes Page：41 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 文件：1.8583 Mbytes Page：41 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 文件：1.8583 Mbytes Page：41 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
24+ |
N/A |
90000 |
原厂正规渠道现货、保证原装正品价格合理 |
|||
TI |
24+ |
CFP16 |
56000 |
公司进口原装现货 批量特价支持 |
|||
TI/美国德州仪器 |
23+ |
CFP16 |
5000 |
公司只做原装,可配单 |
|||
TI/德州仪器 |
23+ |
CFP-16 |
9990 |
正规渠道,只有原装! |
|||
TI |
25+ |
(KGD) |
6000 |
原厂原装,价格优势 |
|||
TI |
25+ |
原封装 |
66330 |
郑重承诺只做原装进口现货 |
|||
TI/德州仪器 |
23+ |
CFP-16 |
9990 |
只有原装 |
|||
Texas Instruments |
23+/24+ |
32-TSSOP |
8600 |
只供原装进口公司现货+可订货 |
|||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
TI/德州仪器 |
24+ |
CFP16 |
1500 |
只供应原装正品 欢迎询价 |
TPS7H2211芯片相关品牌
TPS7H2211规格书下载地址
TPS7H2211参数引脚图相关
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- TPS7H2201YSLASHEM
- TPS7H2201Y/EM
- TPS7H2201-SP_V03
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- TPS7H2201-SP_V01
- TPS7H2201-SP_19
- TPS7H2201-SP_18
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- TPS7H2201HKRSLASHEM
- TPS7H2201HKR/EM
- TPS7H2201EVM-CVAL
- TPS7H2201
- TPS7H2140-SEP_V01
- TPS7H2140-SEP
- TPS7H2140MPWPTSEP
- TPS7H2140EVM
- TPS7H1210-SEP
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- TPS7A49
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- TPS7A45
- TPS7A39
- TPS7A37
- TPS7A33
- TPS7A30
- TPS7A26
- TPS7A25
TPS7H2211数据表相关新闻
TPS7B8450QDCYRQ1
原装代理
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2019-7-31
DdatasheetPDF页码索引
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