位置：首页 > IC中文资料 > TPS7H2211Y/EM
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TPS7H2211Y/EM | TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 |  |   |
TPS7H2211Y/EM | TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TITexas Instruments 德州仪器美国德州仪器公司 |  | |
TPS7H2211Y/EM | TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州仪器 | | | |
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features •Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州仪器 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
2024+ |
N/A |
500000 |
诚信服务,绝对原装原盘 |
|||
TI |
24+ |
CFP16 |
56000 |
公司进口原装现货 批量特价支持 |
|||
TI/德州仪器 |
23+ |
CFP-16 |
9990 |
正规渠道,只有原装! |
|||
TI/德州仪器 |
21+ |
CFP-16 |
13880 |
公司只售原装,支持实单 |
|||
TI |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
|||
TI |
16+ |
原厂封装 |
29 |
宇航IC只做原装假一罚十 |
|||
TI |
25+ |
(KGD) |
6000 |
原厂原装,价格优势 |
|||
TI |
18+ |
原厂原装假一赔十 |
26 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
|||
TI |
23+ |
NA |
20000 |
||||
Texas Instruments |
23+/24+ |
6-TSSOP |
8600 |
只供原装进口公司现货+可订货 |
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TPS7H2211Y/EM规格书下载地址
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DdatasheetPDF页码索引
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