NPN SILICON RF-MICROWAVE POWER TRANSISTOR

DESCRIPTION: The ASI TPR175 is a common base transistor Designed for pulsed systems in the frequency band 1030-1090 MHz. FEATURES: • Common Base • Internal Matching Network • PG = 8.0 dB at 175 W/1090 MHz • Omnigold™ Metalization System

high power COMMON BASE bipolar transistor.

GENERAL DESCRIPTION The TPR 175 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal

175 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz

GENERAL DESCRIPTION The TPR 175 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal

封装/外壳：55CX 包装：散装 描述：RF TRANS NPN 55V 1.09GHZ 55CX 分立半导体产品 晶体管 - 双极（BJT）- 射频

high power COMMON BASE bipolar transistor.

175 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip

RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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