N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transm

The RF MOSFET Line 200/150W, 500MHz, 28V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode

RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF175GU is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz.

RF Power Field-Effect Transistors

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

The RF MOSFET Line 200/150W, 500MHz, 28V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ·Guaranteed Performance: Output Power — 200 W, Power Gain — 14 dB (Typ.) Efficiency — 65% (Typ.)\n·100% RuggednessTested at a Rated output Power\n·MRF175GV @ 28 V, 225 MHz (“V” Suffix)\n·Low Crss — 20 pF typ @ VDS = 28 V\n·Low Thermal Resistance;

The RF MOSFET Line 200/150W, 500MHz, 28V

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封装/外壳：375-04 包装：托盘 描述：FET RF 2CH 65V 225MHZ 375-04 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line

文件：447.7 Kbytes Page：16 Pages

The RF MOSFET Line 200/150W, 500MHz, 28V

文件：1.04918 Mbytes Page：17 Pages

N-CHANNEL MOS BROADBAND RF POWER FETs

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N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

L-Band PA DRIVER AMPLIFIER

DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: