N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transm

The RF MOSFET Line 200/150W, 500MHz, 28V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode

RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF175GV is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz.

RF Power Field-Effect Transistors

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

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封装/外壳：375-04 包装：托盘 描述：FET RF 2CH 65V 225MHZ 375-04 分立半导体产品 晶体管 - FET，MOSFET - 射频

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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3M??Temflex??Vinyl Electrical Tape 175

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Temperature Sensors Line Guide

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Auto Line Transformer

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Auto Line Transformer

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