Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch dual)

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE8204TL uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE8204TL uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES

SC & FC/PC3 Pull-Proof Fiber Optic Connectors

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4-Port DVI Broadcaster with Audio

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