N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES

低压MOS管

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE8204TL uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE8204TL uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

SC & FC/PC3 Pull-Proof Fiber Optic Connectors

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4-Port DVI Broadcaster with Audio

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