Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??H)

High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 3.4 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 13.6 mΩ (typ.) • High forward

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)

High Bandwidth, Bidirectional 65 V Difference Amplifier

GENERAL DESCRIPTION The AD8216 is a single-supply, difference amplifier ideal for amplifying small differential voltages in the presence of large common-mode voltages. The operating input common-mode voltage range extends from −4 V to +65 V. The typical supply voltage is 5 V. The AD8216 features

INSULATED RING TONGUE TERMINAL

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50 Ohm Wireless Transmission Coax, RG-174

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ISA DAQ/DIO Cards

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G = 0.2, Level Translation, 16-Bit ADC Driver

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