TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications ● Small footprint due to small and thin package ● Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 10 S (typ.) ● Low leakage current: IDSS = 10 µA (max

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 UIS Tested • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

T-13/4 Super Ultra-Bright LED Lamps

Description These untinted, nondiffused solid state lamps are designed with special internal optics to give a very high luminous intensity within a well defined viewing angle. The LED materials used within these devices is specifically grown to assure the high light output performance these lamps

High performance, Low Cost 20 pin OTP

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.) • Low leakage current: ID

Surface Mount Microwave Schottky Mixer Diodes

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

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