TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications ● Small footprint due to small and thin package ● Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 10 S (typ.) ● Low leakage current: IDSS = 10 µA (max

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 UIS Tested • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

USB to 8 Optically Isolated Inputs / 8 Reed Relay Digital Interface Adapter

Features • Eight Reed relay outputs • Eight optically isolated inputs • Highly reliable 10VA DIP Reed relays • Two 16-pin removable screw terminals simplify field wiring • Powered by USB connection • Includes 72″ USB cable (Item# CA179) • Sealevel SeaIO Classic software supports Microsoft W

High Voltage, Precision Difference Amplifier

GENERAL DESCRIPTION The AD8209 is a single-supply difference amplifier ideal for amplifying and low-pass filtering small differential voltages in the presence of a large common-mode voltage. The input common mode voltage range extends from −2 V to +45 V at a single +5 V supply. The AD8209 is quali

T3/DS3/E3/STS-1 Input/Output Transformers

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High Voltage, Precision Difference Amplifier

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High Voltage, Precision Difference Amplifier

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