X 频带混频器二极管

HSMS-8xxx 是一系列特别面向使用于 X/Ku 频带所设计的低成本微波肖特基二极管，非常适合 DBS 和 VSAT 降频转换器应用。VBR=4 V, CT=0.26 pF, RD=14Ohms, Vf @ 1 mA=350 mV。;

Surface Mount Microwave Schottky Mixer Diodes

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Surface Mount Microwave Schottky Mixer Diodes

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Surface Mount Microwave Schottky Mixer Diodes

文件：110.82 Kbytes Page：5 Pages

Surface Mount Microwave Schottky Mixer Diodes

文件：110.82 Kbytes Page：5 Pages

封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR） 描述：DIODE SCHOTTKY 4V 75MW SOT143-4 分立半导体产品 二极管 - 射频

封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR） 描述：DIODE SCHOTTKY 4V 75MW SOT143-4 分立半导体产品 二极管 - 射频

Surface Mount Microwave Schottky Mixer Diodes

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T-13/4 Super Ultra-Bright LED Lamps

Description These untinted, nondiffused solid state lamps are designed with special internal optics to give a very high luminous intensity within a well defined viewing angle. The LED materials used within these devices is specifically grown to assure the high light output performance these lamps

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications ● Small footprint due to small and thin package ● Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 10 S (typ.) ● Low leakage current: IDSS = 10 µA (max

High performance, Low Cost 20 pin OTP

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.) • Low leakage current: ID

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

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