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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.) • High forward transfer admittance: |Yfs| = 16 S (typ.) • Low leakage current: IDSS = −10 µA (ma | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
P-Channel 40 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • POL | VBSEMI 微碧半导体 | |||
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON)= 8.1 mΩ(typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS= −10 µA ( | TOSHIBA 东芝 | |||
Field Effect Transistor Silicon P Channel MOS Type(U-MOS III) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 5.0mΩ (typ.) • High forward transfer admittance: |Yfs| = 31 S (typ.) • Low leakage current: IDS | TOSHIBA 东芝 | |||
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS = −10 µA (max | TOSHIBA 东芝 | |||
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON)= 3.1 mΩ(typ.) • High forward transfer admittance: |Yfs| = 47 S (typ.) • Low leakage current: IDSS= −10 µA ( | TOSHIBA 东芝 | |||
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOSIV) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 6.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 40 S (typ.) • Low leakage current: IDSS = −10 μA (m | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
High Efficiency DC竊뢈C Converter Applications High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW= 9.7 nC (typ.) • Low drain-source ON-res | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Field Effect Transistor Silicon P Channel MOS Type (U-MOS?? Lithium Ion Battery Applications Notebook PC Applications • Small footprint due to small and thin package • Low drain-source ON-resistance : RDS (ON)= 3.0 mΩ(typ.) • High forward transfer admittance : |Yfs| = 54 S (typ.) • Low leakage current: IDSS= −10 μA (max) (VDS= −30 V) • Enhance | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Field Effect Transistor Silicon P Channel MOS Type (U-MOS?? Notebook PC Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON)= 5.5 mΩ(typ.) • High forward transfer admittance: |Yfs| = 36 S (typ.) • Low leakage current: IDSS= −10 μA (max) (VDS= −30 V) • Enhancement mode: Vth= −0.8 to −2.0 V (VDS= − | TOSHIBA 东芝 | |||
Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) Lithium-Ion Battery Applications Load switch Applications Notebook PC Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON)= 10 mΩ(typ.) • High forward transfer admittance: |Yfs| = 24 S (typ.) • Low leakage current: IDSS | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 文件:267.49 Kbytes Page:7 Pages | TOSHIBA 东芝 | |||
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 文件:267.49 Kbytes Page:7 Pages | TOSHIBA 东芝 | |||
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 文件:271.99 Kbytes Page:7 Pages | TOSHIBA 东芝 | |||
P-Channel 30-V (D-S) MOSFET 文件:994.81 Kbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) | TOSHIBA 东芝 | |||
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 文件:271.99 Kbytes Page:7 Pages | TOSHIBA 东芝 | |||
Lithium Ion Applications Notebook PC Applications Portable Equipment Applications 文件:281 Kbytes Page:7 Pages | TOSHIBA 东芝 | |||
Power MOSFET (P-ch single) | TOSHIBA 东芝 | |||
Lithium Ion Applications Notebook PC Applications Portable Equipment Applications 文件:281 Kbytes Page:7 Pages | TOSHIBA 东芝 | |||
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 文件:272.05 Kbytes Page:7 Pages | TOSHIBA 东芝 | |||
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) | TOSHIBA 东芝 | |||
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 文件:272.05 Kbytes Page:7 Pages | TOSHIBA 东芝 | |||
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 文件:285.07 Kbytes Page:7 Pages | TOSHIBA 东芝 | |||
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 文件:285.07 Kbytes Page:7 Pages | TOSHIBA 东芝 | |||
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 文件:276.88 Kbytes Page:7 Pages | TOSHIBA 东芝 | |||
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 文件:276.88 Kbytes Page:7 Pages | TOSHIBA 东芝 | |||
P-Channel 40 V (D-S) MOSFET 文件:1.024839 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
efficient and cost-effective solution to wear problems on the shaft. � DESCRIPTION The BECA 810 profile is a standard stainless steel sleeve. � APPLICATIONS Hubs Pinions Differentials Gear boxes Crankshafts � DESCRIPTION The BECA 811 profile is a premium stainless steel sleeve with a hard chrome treatment. � APPLICATIONS Hubs Pinions Different | FRANCEJOINT | |||
SLEEK AND SLIM, WITH SOFTLY ROUNDED CORNERS AND GENTLY CURVED ROCKERS, NEXUS COMBINES SUPERIOR QUALITY WITH STUNNING GOOD LOOK SAND EASY INSTALLATION. 10AX PLATE SWITCHES 20A SWITCHES 45A SWITCHES 13 AMP SOCKET OUTLETS ROUND PIN SOCKET OUTLETS 13 AMP FUSED CONNECTION UNITS 13 AMP FUSED CONNECTION UNITS WITH FLEX OUTLET 25 AMP FLEX OUTLET PLATE SHAVER SOCKET CO-AXIAL, SATELLITE AND TRIPLEX OUTLETS TELEPHONE & DATA OUTLETS DIMMERS SURF | BG | |||
Cartridge Fuse Holders Enclosed Fuseholders > Circuit Board Mounted 文件:913.17 Kbytes Page:2 Pages | Littelfuse 力特 | |||
Mill-Max Spring-loaded Connectors Minimize Noise 文件:2.45329 Mbytes Page:11 Pages | MILL-MAX | |||
PC Mount, Shocksafe 5x20mm / 6.3x32mm Fuses 文件:81.73 Kbytes Page:1 Pages | Littelfuse 力特 |
TPC811产品属性
- 类型
描述
- 型号
TPC811
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
22+ |
SOP8 |
12245 |
现货,原厂原装假一罚十! |
|||
TOS |
23+ |
SOP/8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
TOSHIBA |
24+/25+ |
10000 |
原装正品现货库存价优 |
||||
TOSHIBA |
25+ |
SOP8 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
TOSHIBA |
20+ |
SOP8 |
2960 |
诚信交易大量库存现货 |
|||
TOSHIBA(东芝) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TOSHIBA/东芝 |
20+ |
SOP8 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA |
25+ |
SOP8 |
2568 |
原装优势!绝对公司现货 |
|||
TOS |
23+ |
SOP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
TOS |
23+ |
SOP8大体 |
65480 |
TPC811规格书下载地址
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