型号 功能描述 生产厂家&企业 LOGO 操作

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=17mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=16S(typ.) •Lowleakagecurrent:IDSS=−10µA(ma

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

P-Channel40V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •POL

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=8.1mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=23S(typ.) •Lowleakagecurrent:IDSS=−10µA(

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

FieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=5.0mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=31S(typ.) •Lowleakagecurrent:IDS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=8mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=23S(typ.) •Lowleakagecurrent:IDSS=−10µA(max

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=3.1mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=47S(typ.) •Lowleakagecurrent:IDSS=−10µA(

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

FIELDEFFECTTRANSISTORSILICONPCHANNELMOSTYPE(U-MOSIV)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=6.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=40S(typ.) •Lowleakagecurrent:IDSS=−10μA(m

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HighEfficiencyDC竊뢈CConverterApplications

HighEfficiencyDC/DCConverterApplications NotebookPCApplications PortableEquipmentApplications CCFLInverterApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:QSW=9.7nC(typ.) •Lowdrain-sourceON-res

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

FieldEffectTransistorSiliconPChannelMOSType(U-MOS??

LithiumIonBatteryApplications NotebookPCApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=3.0mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=54S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−30V) •Enhance

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

FieldEffectTransistorSiliconPChannelMOSType(U-MOS??

NotebookPCApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=5.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=36S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−30V) •Enhancementmode:Vth=−0.8to−2.0V(VDS=−

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

FieldEffectTransistorSiliconPChannelMOSType(U-MOSV)

Lithium-IonBatteryApplications LoadswitchApplications NotebookPCApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=10mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=24S(typ.) •Lowleakagecurrent:IDSS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

文件:267.49 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

文件:267.49 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

文件:271.99 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

P-Channel30-V(D-S)MOSFET

文件:994.81 Kbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

文件:271.99 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

LithiumIonApplicationsNotebookPCApplicationsPortableEquipmentApplications

文件:281 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

LithiumIonApplicationsNotebookPCApplicationsPortableEquipmentApplications

文件:281 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

文件:272.05 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

文件:272.05 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

文件:285.07 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

文件:285.07 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

文件:276.88 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

文件:276.88 Kbytes Page:7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

P-Channel40V(D-S)MOSFET

文件:1.024839 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

Mill-MaxSpring-loadedConnectorsMinimizeNoise

文件:2.45329 Mbytes Page:11 Pages

MILL-MAX

Mill-Max Manufacturing Corp.

MILL-MAX

PCMount,Shocksafe5x20mm/6.3x32mmFuses

文件:81.73 Kbytes Page:1 Pages

Littelfuselittelfuse

力特力特公司

Littelfuse

POWERTRIODE

文件:414.55 Kbytes Page:9 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

PRECISE,RELIABLE,ANDCOSTEFFECTIVESTANDARDSOLUTIONS

文件:867.89 Kbytes Page:6 Pages

PREDIP

Precid-Dip Durtal SA

PREDIP

SurfaceMountBackBoxes

文件:104.21 Kbytes Page:2 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

TPC811产品属性

  • 类型

    描述

  • 型号

    TPC811

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

更新时间:2025-5-11 23:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
SOP-8
42129
只做原装 公司现货库存
TOSHIBA/东芝
24+
NA/
3298
原厂直销,现货供应,账期支持!
TOSHIBA
2016+
SOP8
3303
只做原装,假一罚十,公司可开17%增值税发票!
TOSHIBA
24+
SOP-8
30000
原装正品公司现货,假一赔十!
TOSHIBA
24+
SOP-8
6000
只做自己库存,全新原装进口正品假一赔百,可开13%增
TOSHIBA
1836+
SOP8
9852
只做原装正品现货!或订货假一赔十!
TOSHIBA
23+
SOP-8
9526
TOSHIBA/东芝
25+
SO-8
54558
百分百原装现货 实单必成 欢迎询价
TOSHIBA
24+
SOP8
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
TOSHIBA
25+23+
SOP8PB
37193
绝对原装正品全新进口深圳现货

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  • ISSI
  • JAE
  • Micrel
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  • UTC
  • YEASHIN

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