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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=17mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=16S(typ.) •Lowleakagecurrent:IDSS=−10µA(ma | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
P-Channel40V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •POL | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=8.1mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=23S(typ.) •Lowleakagecurrent:IDSS=−10µA( | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
FieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=5.0mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=31S(typ.) •Lowleakagecurrent:IDS | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=8mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=23S(typ.) •Lowleakagecurrent:IDSS=−10µA(max | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=3.1mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=47S(typ.) •Lowleakagecurrent:IDSS=−10µA( | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
FIELDEFFECTTRANSISTORSILICONPCHANNELMOSTYPE(U-MOSIV) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=6.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=40S(typ.) •Lowleakagecurrent:IDSS=−10μA(m | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
HighEfficiencyDC竊뢈CConverterApplications HighEfficiencyDC/DCConverterApplications NotebookPCApplications PortableEquipmentApplications CCFLInverterApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:QSW=9.7nC(typ.) •Lowdrain-sourceON-res | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
FieldEffectTransistorSiliconPChannelMOSType(U-MOS?? LithiumIonBatteryApplications NotebookPCApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=3.0mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=54S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−30V) •Enhance | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
FieldEffectTransistorSiliconPChannelMOSType(U-MOS?? NotebookPCApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=5.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=36S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−30V) •Enhancementmode:Vth=−0.8to−2.0V(VDS=− | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
FieldEffectTransistorSiliconPChannelMOSType(U-MOSV) Lithium-IonBatteryApplications LoadswitchApplications NotebookPCApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=10mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=24S(typ.) •Lowleakagecurrent:IDSS | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:267.49 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:267.49 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:271.99 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
P-Channel30-V(D-S)MOSFET 文件:994.81 Kbytes Page:9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:271.99 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
LithiumIonApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:281 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
LithiumIonApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:281 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:272.05 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:272.05 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:285.07 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:285.07 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:276.88 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications 文件:276.88 Kbytes Page:7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
P-Channel40V(D-S)MOSFET 文件:1.024839 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Mill-MaxSpring-loadedConnectorsMinimizeNoise 文件:2.45329 Mbytes Page:11 Pages | MILL-MAX Mill-Max Manufacturing Corp. | |||
PCMount,Shocksafe5x20mm/6.3x32mmFuses 文件:81.73 Kbytes Page:1 Pages | Littelfuselittelfuse 力特力特公司 | |||
POWERTRIODE 文件:414.55 Kbytes Page:9 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
PRECISE,RELIABLE,ANDCOSTEFFECTIVESTANDARDSOLUTIONS 文件:867.89 Kbytes Page:6 Pages | PREDIP Precid-Dip Durtal SA | |||
SurfaceMountBackBoxes 文件:104.21 Kbytes Page:2 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |
TPC811产品属性
- 类型
描述
- 型号
TPC811
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
SOP-8 |
42129 |
只做原装 公司现货库存 |
|||
TOSHIBA/东芝 |
24+ |
NA/ |
3298 |
原厂直销,现货供应,账期支持! |
|||
TOSHIBA |
2016+ |
SOP8 |
3303 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TOSHIBA |
24+ |
SOP-8 |
30000 |
原装正品公司现货,假一赔十! |
|||
TOSHIBA |
24+ |
SOP-8 |
6000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
TOSHIBA |
1836+ |
SOP8 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
TOSHIBA |
23+ |
SOP-8 |
9526 |
||||
TOSHIBA/东芝 |
25+ |
SO-8 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
TOSHIBA |
24+ |
SOP8 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
TOSHIBA |
25+23+ |
SOP8PB |
37193 |
绝对原装正品全新进口深圳现货 |
TPC811规格书下载地址
TPC811参数引脚图相关
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- TPC8114(TE12L,Q)
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- TPC8113_06
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- TPC8111
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- TPC8109(TE12LQ)
- TPC8109(TE12L,Q,M)
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- TPC8109(TE12L)
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- TPC8108(TE12L)
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- TPC8107_06
- TPC8107(TE12L,Q,M)
- TPC8107(TE12L,Q)
- TPC8107(TE12L)
- TPC8107
- TPC8106-H
- TPC8105-H(TE12L)
- TPC8105-H
- TPC8104-H
- TPC8103
- TPC8102
- TPC8092,LQ(S
- TPC8087
- TPC8086
- TPC8085
- TPC8076
- TPC8074
- TPC8073
- TPC8042
- TPC8041
- TPC8030
- TPC8029
- TPC8028
- TPC8027
- TPC8026
- TPC8025
- TPC8014
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技术参数 耗散功率2.13W 静态电流4.00mA 输出功率3.10W 工作温度(Max)105℃ 工作温度(Min)-40℃ 耗散功率(Max)2130mW 电源电压2.5V~5.5V 封装参数 安装方式SurfaceMount 引脚数8 封装PowerPad-MSOP-8 外形尺寸 封装PowerPad-MSOP-8 物理参数 工作温度-40℃~105℃(TA) 其他 产品生命周期Active
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