TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.) • High forward transfer admittance: |Yfs| = 16 S (typ.) • Low leakage current: IDSS = −10 µA (ma

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

P-Channel 40 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • POL

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：267.49 Kbytes Page：7 Pages

Power MOSFET (P-ch single)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：267.49 Kbytes Page：7 Pages

RS232/422 Low Cap, #24-10pr, FPO, O/A FoilBraid, PVC Jkt, CMG, 100Ω

Product Description Computer EIA RS-232/422 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket.

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

Ring and Spade Terminals

文件：187.51 Kbytes Page：1 Pages

METAL CABLE CLAMPS

文件：279.99 Kbytes Page：1 Pages

Low Capacitance for EIA RS-232 and EIA RS-422 Applications

文件：365.47 Kbytes Page：2 Pages