型号 功能描述 生产厂家&企业 LOGO 操作
TP65H300G4LSGB

650VSuperGaN®GaNFETinPQFN(sourcetab)

Description TheTP65H300G4LSGB650V,240mΩGalliumNitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN®platformus

TRANSPHORM

Transphorm

TRANSPHORM

650VSuperGaN®GaNFETinPQFN(sourcetab)

■GenIVtechnology ■JEDEC-qualifiedGaNtechnology ■DynamicRDS(on)effproductiontested ■Robustdesign,definedby ●Transientover-voltagecapability ●OperationwithE-modeGatedriverswithout needforZenerprotection ■VerylowQRR ■Reducedcrossoverloss ■RoHScompliantandH

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

650VSuperGaN®GaNFETinPQFN(sourcetab)

■GenIVtechnology ■JEDEC-qualifiedGaNtechnology ■DynamicRDS(on)effproductiontested ■Robustdesign,definedby ●Transientover-voltagecapability ●OperationwithE-modeGatedriverswithout needforZenerprotection ■VerylowQRR ■Reducedcrossoverloss ■RoHScompliantandH

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

650VSuperGaN®GaNFETinPQFN(sourcetab)

Description TheTP65H300G4LSGB650V,240mΩGalliumNitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN®platformus

TRANSPHORM

Transphorm

TRANSPHORM

650VSuperGaN®GaNFETinPQFN(sourcetab)

Description TheTP65H300G4JSGB650V,240mΩGalliumNitride(GaN) FETisanormally-offdeviceusingTransphorm’sGenIV platform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN®platfor

TRANSPHORM

Transphorm

TRANSPHORM

650VSuperGaN®GaNFETinPQFN(sourcetab)

Description TheTP65H300G4JSGB650V,240mΩGalliumNitride(GaN) FETisanormally-offdeviceusingTransphorm’sGenIV platform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN®platfor

TRANSPHORM

Transphorm

TRANSPHORM

650VSuperGaN®FETinPQFN(sourcetab)

Description TheTP65H300G4LSG650V,240mΩgalliumnitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN®platformus

TRANSPHORM

Transphorm

TRANSPHORM
更新时间:2025-7-14 18:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOPRO
24+
393625
电源IC原装正品有优势
TOPRO
2450+
QFP
6540
只做原装正品现货!或订货假一赔十!
NS
24+
DIP-16
37500
原装正品现货,价格有优势!
TOPRO
25+23+
QFP
38526
绝对原装正品全新进口深圳现货
HARRIS
1998
SOP
472
原装现货海量库存欢迎咨询
HARRIS
25+
SOP
4500
全新原装、诚信经营、公司现货销售!
TOPRO
24+
QFP
2789
全新原装自家现货!价格优势!
MOT
24+
DIP
3500
原装现货,可开13%税票
TOPRO
17PB
QFP
12
普通
TP
24+
NA/
3295
原装现货,当天可交货,原型号开票

TP65H300G4LSGB芯片相关品牌

  • AIMTEC
  • ANPEC
  • BELDEN
  • BURR-BROWN
  • Dialight
  • HONGFA
  • ICT
  • JDSU
  • Rubycon
  • SANYOU
  • SENSORTECHNICS
  • XTAITQ

TP65H300G4LSGB数据表相关新闻