650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H300G4LSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platfor

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platfor

650V SuperGaN® FET in PQFN (source tab)

Description The TP65H300G4LSG 650V, 240 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H300G4LSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

650V SuperGaN® GaN FET in PQFN (source tab)

■ Gen IV technology ■ JEDEC-qualified GaN technology ■ Dynamic RDS(on)eff production tested ■ Robust design, defined by ● Transient over-voltage capability ● Operation with E-mode Gate drivers without need for Zener protection ■ Very low QRR ■ Reduced crossover loss ■ RoHS compliant and H