650VSuperGaN®GaNFETinPQFN(sourcetab)

■GenIVtechnology ■JEDEC-qualifiedGaNtechnology ■DynamicRDS(on)effproductiontested ■Robustdesign,definedby ●Transientover-voltagecapability ●OperationwithE-modeGatedriverswithout needforZenerprotection ■VerylowQRR ■Reducedcrossoverloss ■RoHScompliantandH

650VSuperGaN®GaNFETinPQFN(sourcetab)

■GenIVtechnology ■JEDEC-qualifiedGaNtechnology ■DynamicRDS(on)effproductiontested ■Robustdesign,definedby ●Transientover-voltagecapability ●OperationwithE-modeGatedriverswithout needforZenerprotection ■VerylowQRR ■Reducedcrossoverloss ■RoHScompliantandH

650VSuperGaN®GaNFETinPQFN(sourcetab)

Description TheTP65H300G4JSGB650V,240mΩGalliumNitride(GaN) FETisanormally-offdeviceusingTransphorm’sGenIV platform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN®platfor

650VSuperGaN®GaNFETinPQFN(sourcetab)

Description TheTP65H300G4JSGB650V,240mΩGalliumNitride(GaN) FETisanormally-offdeviceusingTransphorm’sGenIV platform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN®platfor

650VSuperGaN®FETinPQFN(sourcetab)

Description TheTP65H300G4LSG650V,240mΩgalliumnitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN®platformus

650VSuperGaN®GaNFETinPQFN(sourcetab)

Description TheTP65H300G4LSGB650V,240mΩGalliumNitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN®platformus