RF Transformer 350 - 1125 MHz

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RF Pulse Transformer, 350 - 1125 MHz

文件：61.26 Kbytes Page：2 Pages

RF Pulse Transformer

文件：61.26 Kbytes Page：2 Pages

包装：散装 描述：TELEPHONE PLUG INLINE 8 CONDUCTO 连接器，互连器件 音频连接器

耳机插孔和插头

(non-RoHS) Flux Coupled Balun

The transformer coupled balun can provide a wide frequency range. DC isolation from primary coil to secondary coil is also a feature of this device. ·50 Ohms Unbalanced to Dual 100 Ohms Unbalanced\n·MIL-STD-202 Screening Available\n·Accessible Center Tap for DC Bias\n·Low Insertion Loss\n·Unbalanced or 200 Ohms Balanced;

RF Transformer 350 - 1125 MHz

文件：110.38 Kbytes Page：1 Pages

包装：散装 描述：TRANSFORMER,WIDE-BAND 变压器 脉冲变压器

200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requirement, VGS = 3

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages