200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requirement, VGS = 3

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed

DMOS Transistors (N-Channel)

FEATURES ♦ High breakdown voltage ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown ♦ Specially sui

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. Features • Low Dr

小信号 MOSFET，200V，250mA，10 Ω，单 N 沟道，TO-92 逻辑电平

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. Features • Low Dr

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. Features • Low Dr

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. Features • Low Dr

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level

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Schottky Diode

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level

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Customer Specification

Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 18 (41/34) AWG Bare Copper 0.043 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.063 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 3 BLUE 2 WHITE 4 BLACK 2) Cable Assembly 4 Components Cabled a) Twists: 5.3 Twist

Customer Specification

Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 18 (41/34) AWG Bare Copper 0.043 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.063 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 3 BLUE 2 WHITE 4 BLACK 2) Cable Assembly 4 Components Cabled a) Twists: 5.3 Twist

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Network Chip Resistors

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Precision Wirewound Resistors

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