TN210晶体管资料

  • TN2102别名:TN2102三极管、TN2102晶体管、TN2102晶体三极管

  • TN2102生产厂家

  • TN2102制作材料:Si-NPN

  • TN2102性质

  • TN2102封装形式:直插封装

  • TN2102极限工作电压:120V

  • TN2102最大电流允许值:0.001A

  • TN2102最大工作频率:<1MHZ或未知

  • TN2102引脚数:3

  • TN2102最大耗散功率:2W

  • TN2102放大倍数

  • TN2102图片代号:A-80

  • TN2102vtest:120

  • TN2102htest:999900

  • TN2102atest:0.001

  • TN2102wtest:2

  • TN2102代换 TN2102用什么型号代替:3DK104E,

TN210价格

参考价格:¥2.4863

型号:TN2106K1-G 品牌:Microchip Technology 备注:这里有TN210多少钱,2026年最近7天走势,今日出价,今日竞价,TN210批发/采购报价,TN210行情走势销售排行榜,TN210报价。
型号 功能描述 生产厂家 企业 LOGO 操作
TN210

Adapting HC 908GZ16 Stationery for HC908GZ8

文件:462.47 Kbytes Page:8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TN210

Adapting HC 908GZ16 Stationery for HC908GZ8

ETC

知名厂家

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

Power Transistors

文件:50.69 Kbytes Page:1 Pages

CENTRAL

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes Page:14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes Page:14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes Page:14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

MOTOROLA

摩托罗拉

5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High

MOTOROLA

摩托罗拉

POWER RECTIFIERS(2.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers Ideally suite for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

MOSPEC

统懋

POWER RECTIFIERS(2.0A,500-1000V)

MOSPEC

统懋

Voltage Follower

文件:348.91 Kbytes Page:16 Pages

NSC

国半

TN210产品属性

  • 类型

    描述

  • 型号

    TN210

  • 功能描述

    Adapting HC 908GZ16 Stationery for HC908GZ8

更新时间:2026-3-16 9:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROCHIP/微芯
2025+
SOT-23
5000
原装进口,免费送样品!
SUPERTEX
24+
TO-92
5810
只做原装正品
SUPERTEX
2023+
SOT23-3
6895
原厂全新正品旗舰店优势现货
SUPERTEX
23+24
SOT23
28950
专营原装正品SMD二三极管,电源IC
MICROCHIP/微芯
2406+
TO-92
33000
诚信经营!进口原装!量大价优!
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
MICROCHIP/微芯
22+
TO-92-3
12245
现货,原厂原装假一罚十!
SUPER
25+
SOT-23
46294
SUPER全新特价TN2106K1-G即刻询购立享优惠#长期有货
SUPERTEX
2450+
SOT-23
8850
只做原装正品假一赔十为客户做到零风险!!
VBSEMI/微碧半导体
24+
SOT-23
60000

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