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TN2106价格
参考价格：￥2.4863
型号：TN2106K1-G 品牌：Microchip Technology 备注：这里有TN2106多少钱，2026年最近7天走势，今日出价，今日竞价，TN2106批发/采购报价，TN2106行情走势销售排行榜，TN2106报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TN2106 | N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped | SUTEX |   | |
TN2106 | N-Channel Enhancement-Mode Vertical DMOS FET 文件：550.85 Kbytes Page：6 Pages | SUTEX | | |
TN2106 | N-Channel Enhancement-Mode Vertical DMOS FET 文件：550.85 Kbytes Page：6 Pages | SUTEX | | |
TN2106 | N-Channel Enhancement-Mode Vertical DMOS FET 文件：822.75 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | |
TN2106 | MOSFET, N-Channel Enhancement-Mode, 60V, 2.5 Ohm | MICROCHIP 微芯科技 | | |
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：45.67 Kbytes Page：4 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：45.67 Kbytes Page：4 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：822.75 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：550.85 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：45.67 Kbytes Page：4 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：550.85 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：550.85 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：822.75 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：45.67 Kbytes Page：4 Pages | SUTEX | | ||
L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is | NEC 瑞萨 | | ||
L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is | NEC 瑞萨 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda | SUTEX | |
TN2106产品属性
- 类型
描述
- 型号
TN2106
- 制造商
SUPERTEX
- 制造商全称
SUPERTEX
- 功能描述
N-Channel Enhancement-Mode Vertical DMOS FETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP/微芯 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
SUPERTEX |
24+ |
SOT23 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
SUPERTEXINC |
24+ |
TO-92 |
5000 |
全新原装正品,现货销售 |
|||
MICROCHIP/美国微芯 |
21+ |
SOT-23(SOT-23-3) |
10000 |
只做原装,质量保证 |
|||
MICROCHIP/美国微芯 |
25+ |
SOT-23(SOT-23-3) |
30000 |
原装正品公司现货,假一赔十! |
|||
MICROCHIP/美国微芯 |
24+ |
SOT-23(SOT-23-3) |
6000 |
全新原装深圳仓库现货有单必成 |
|||
SUPERTEX |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
SUPER |
25+ |
SOT-23 |
46294 |
SUPER全新特价TN2106K1-G即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
23+ |
SOT-23 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
SUPERTEX |
2450+ |
SOT-23 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
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