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TN2106价格

参考价格:¥2.4863

型号:TN2106K1-G 品牌:Microchip Technology 备注:这里有TN2106多少钱,2026年最近7天走势,今日出价,今日竞价,TN2106批发/采购报价,TN2106行情走势销售排行榜,TN2106报价。
型号 功能描述 生产厂家 企业 LOGO 操作
TN2106

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

TN2106

MOSFET, N-Channel Enhancement-Mode, 60V, 2.5 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

MICROCHIP

微芯科技

TN2106

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes Page:14 Pages

MICROCHIP

微芯科技

TN2106

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

TN2106

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology\nThese enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance ❏ Free from secondary breakdown\n❏ Low power drive requirement\n❏ Ease of paralleling\n❏ Low CISS and fast switching speeds\n❏ Excellent thermal stability\n❏ Integral Source-Drain diode\n❏ High input impedance and high gain\n❏ Complementary N- and P-channel devicesApplications\n❏ Logic level interfa;

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes Page:14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes Page:14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

NEC

瑞萨

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

NEC

瑞萨

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda

SUTEX

TN2106产品属性

  • 类型

    描述

  • BVdss min (V):

    60

  • Rds (on) max (Ohms):

    2.5

  • CISSmax (pF):

    50

  • Vgs(th) max (V):

    2.0

  • Packages:

    3\\SOT-233\\TO-92

更新时间:2026-5-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Microchip Technology / Atmel
25+
TO-92-3
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
Microchip Technology / Atmel
25+
TO-92-3
6843
样件支持,可原厂排单订货!
MICROCHIP/微芯
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
SUPER
25+
SOT-23
46294
SUPER全新特价TN2106K1-G即刻询购立享优惠#长期有货
SUPERTEXINC
18+
TO-92
583
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
MICROCHIP/美国微芯
21+
SOT-23(SOT-23-3)
10000
只做原装,质量保证
SUPERTEX
25+
584
公司优势库存 热卖中!
Supertex
2025+
SOT-23
7695
全新原厂原装产品、公司现货销售
SUPERTEX
2450+
SOT-23
8850
只做原装正品假一赔十为客户做到零风险!!

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