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TN2106价格

参考价格:¥2.4863

型号:TN2106K1-G 品牌:Microchip Technology 备注:这里有TN2106多少钱,2026年最近7天走势,今日出价,今日竞价,TN2106批发/采购报价,TN2106行情走势销售排行榜,TN2106报价。
型号 功能描述 生产厂家 企业 LOGO 操作
TN2106

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

TN2106

MOSFET, N-Channel Enhancement-Mode, 60V, 2.5 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

MICROCHIP

微芯科技

TN2106

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes Page:14 Pages

MICROCHIP

微芯科技

TN2106

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

TN2106

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology\nThese enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance ❏ Free from secondary breakdown\n❏ Low power drive requirement\n❏ Ease of paralleling\n❏ Low CISS and fast switching speeds\n❏ Excellent thermal stability\n❏ Integral Source-Drain diode\n❏ High input impedance and high gain\n❏ Complementary N- and P-channel devicesApplications\n❏ Logic level interfa;

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes Page:14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes Page:14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

NEC

瑞萨

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

NEC

瑞萨

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda

SUTEX

TN2106产品属性

  • 类型

    描述

  • BVdss min (V):

    60

  • Rds (on) max (Ohms):

    2.5

  • CISSmax (pF):

    50

  • Vgs(th) max (V):

    2.0

  • Packages:

    3\\SOT-233\\TO-92

更新时间:2026-7-22 19:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SUPER
25+
SOT-23
46294
SUPER全新特价TN2106K1-G即刻询购立享优惠#长期有货
SUPERTEX
22+
SOT23
8900
全新正品现货 有挂就有现货
SUPERTEX
2450+
SOT-23
8850
只做原装正品假一赔十为客户做到零风险!!
MICROCHIP/美国微芯
26+
SOT-23(SOT-23-3)
30000
原装正品公司现货,假一赔十!
SUPERTEX
23+
SOT-23
6000
专业配单保证原装正品假一罚十
SUPERTEX
24+
TO-92
5810
只做原装正品
SOT-23
25+
NA
15659
振宏微专业只做正品,假一罚百!
SUPERTEX
25+23+
Sot-23
30286
绝对原装正品全新进口深圳现货
SUPERTE
25+
SOT23-3
12500
全新原装现货热卖,价格优势
MICROCHIP
26+
n/a
6000
芯为深圳现货

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