TN21晶体管资料

  • TN2102别名:TN2102三极管、TN2102晶体管、TN2102晶体三极管

  • TN2102生产厂家

  • TN2102制作材料:Si-NPN

  • TN2102性质

  • TN2102封装形式:直插封装

  • TN2102极限工作电压:120V

  • TN2102最大电流允许值:0.001A

  • TN2102最大工作频率:<1MHZ或未知

  • TN2102引脚数:3

  • TN2102最大耗散功率:2W

  • TN2102放大倍数

  • TN2102图片代号:A-80

  • TN2102vtest:120

  • TN2102htest:999900

  • TN2102atest:0.001

  • TN2102wtest:2

  • TN2102代换 TN2102用什么型号代替:3DK104E,

TN21价格

参考价格:¥2.4863

型号:TN2106K1-G 品牌:Microchip Technology 备注:这里有TN21多少钱,2025年最近7天走势,今日出价,今日竞价,TN21批发/采购报价,TN21行情走势销售排行榜,TN21报价。
型号 功能描述 生产厂家 企业 LOGO 操作

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

Adapting HC 908GZ16 Stationery for HC908GZ8

文件:462.47 Kbytes Page:8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Power Transistors

文件:50.69 Kbytes Page:1 Pages

Central

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes Page:14 Pages

Microchip

微芯科技

MOSFET, N-Channel Enhancement-Mode, 60V, 2.5 Ohm

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes Page:14 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:550.85 Kbytes Page:6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:822.75 Kbytes Page:14 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:45.67 Kbytes Page:4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:474.93 Kbytes Page:14 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:570.06 Kbytes Page:5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:730.81 Kbytes Page:5 Pages

SUTEX

包装:盒 描述:NUT SPANNER WRENCHES, RECTANGLUL 工具 专用工具

AIRBORN

N-Channel Enhancement-Mode Vertical DMOS FET

文件:474.93 Kbytes Page:14 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:570.06 Kbytes Page:5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:730.81 Kbytes Page:5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:317.84 Kbytes Page:14 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:317.84 Kbytes Page:14 Pages

Microchip

微芯科技

TN21产品属性

  • 类型

    描述

  • 型号

    TN21

  • 功能描述

    Adapting HC 908GZ16 Stationery for HC908GZ8

更新时间:2025-12-11 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SUPERTEX
24+
NA/
18570
原装现货,当天可交货,原型号开票
MICROCHIP/微芯
25+
SOT-23
20300
MICROCHIP/微芯原装特价TN2101K1-G即刻询购立享优惠#长期有货
SUTEX
2021+
60000
原装现货,欢迎询价
SUPERTEX
24+
SOT23
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
Supertex
SOT-23
39000
一级代理 原装正品假一罚十价格优势长期供货
NSC
25+
100
公司优势库存 热卖中!!
SUPERTEX
23+
SOT-23
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
SUPERTEX
2023+
SOT-23
3000
一级代理优势现货,全新正品直营店
SUPERTEX
05+
SOT-23
880000
明嘉莱只做原装正品现货

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