General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Features

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

► Low CISS and fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► High input impedance and high gain

Applications

► Logic level interfaces – ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo-voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches