TIP1晶体管资料

  • TIP100别名:TIP100三极管、TIP100晶体管、TIP100晶体三极管

  • TIP100生产厂家:美国摩托罗拉半导体公司

  • TIP100制作材料:Si-N+Darl+Di

  • TIP100性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • TIP100封装形式:直插封装

  • TIP100极限工作电压:60V

  • TIP100最大电流允许值:8A

  • TIP100最大工作频率:<1MHZ或未知

  • TIP100引脚数:3

  • TIP100最大耗散功率:80W

  • TIP100放大倍数:β>1000

  • TIP100图片代号:B-10

  • TIP100vtest:60

  • TIP100htest:999900

  • TIP100atest:8

  • TIP100wtest:80

  • TIP100代换 TIP100用什么型号代替:BD645,BD897,BDW73A...D,BDX53A...F,3DK208,

TIP1价格

参考价格:¥3.3211

型号:TIP100-BP 品牌:Micro 备注:这里有TIP1多少钱,2024年最近7天走势,今日出价,今日竞价,TIP1批发/采购报价,TIP1行情走势销售排行榜,TIP1报价。
型号 功能描述 生产厂家&企业 LOGO 操作
TIP1

nullInput voltage 90~305V AC

GeneralFeatures TransformertypeSMPS Inputvoltage90~305VAC Max.output54VDC,2.3A PlugsupportEU,USA,AUS,UK,JPN IPratingIP67 CertificateBIS,UL8750,TUV,PSE,CCC,ENEC,CB, EMC,CE,UKDeclaration Operationaltemperaturerange+5°C~+45°C

TIMOTIONTiMOTION Technology Co. Ltd.

天动科技天动科技有限公司

TIMOTION

POWER TRANSISTORS(8A,60-100V,80W)

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

MOSPEC

MOSPEC

MOSPEC

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@30mAdc

MotorolaMotorola, Inc

摩托罗拉

Motorola

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)−

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPN SILICON POWER DARLINGTONS

●DesignedforComplementaryUsewithTIP105,TIP106andTIP107 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

Monolithic Construction With Built In Base- Emitter Shunt Resistors

•MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@Vce=4V,Ic=3A(Min.) •Collector-EmitterSustainingVoltage •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP105/106/107

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Power Darlingtons for Linear and Switching Applications

TIP100,101,102NPNPLASTICPOWERTRANSISTORS TIP105,106,107PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

Monolithic Construction With Built In Base-Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=4V,IC=3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP105/106/107

SEMIHOW

SemiHow Co.,Ltd.

SEMIHOW

Darlington Power Transistors (NPN)

DarlingtonPowerTransistors(NPN) Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant

TAITRON

TAITRON

TAITRON

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

CDIL

CDIL

CDIL

SILICON DARLINGTON POWER TRANSISTORS

NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. PNPcomplementsareTIP105-106-107 CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

TEL

TRANSYS Electronics Limited

TEL

Silicon NPN Darlington Power Transistors

DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCcurrentgain ·Lowcollectorsaturationvoltage ·ComplementtotypeTIP105/106/107 APPLICATIONS ·Forindustrialuse

SAVANTIC

Savantic, Inc.

SAVANTIC

NPN Plastic Medium-Power Silicon Transistors

Features •MountingTorgue:5in-lbsMaximum •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LowCollector-EmitterSaturati

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPN Plastic Medium-Power Silicon Transistors

Features •MountingTorgue:5in-lbsMaximum •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LowCollector-EmitterSaturati

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

CDIL

CDIL

CDIL

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@30mAdc

MotorolaMotorola, Inc

摩托罗拉

Motorola

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)−

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPN SILICON POWER DARLINGTONS

●DesignedforComplementaryUsewithTIP105,TIP106andTIP107 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

POWER TRANSISTORS(8A,60-100V,80W)

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

MOSPEC

MOSPEC

MOSPEC

Monolithic Construction With Built In Base- Emitter Shunt Resistors

•MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@Vce=4V,Ic=3A(Min.) •Collector-EmitterSustainingVoltage •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP105/106/107

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Power Darlingtons for Linear and Switching Applications

TIP100,101,102NPNPLASTICPOWERTRANSISTORS TIP105,106,107PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

TEL

TRANSYS Electronics Limited

TEL

Darlington Power Transistors (NPN)

DarlingtonPowerTransistors(NPN) Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant

TAITRON

TAITRON

TAITRON

NPN Plastic Medium-Power Silicon Transistors

Features •MountingTorgue:5in-lbsMaximum •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LowCollector-EmitterSaturati

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

Silicon NPN Darlington Power Transistors

DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCcurrentgain ·Lowcollectorsaturationvoltage ·ComplementtotypeTIP105/106/107 APPLICATIONS ·Forindustrialuse

SAVANTIC

Savantic, Inc.

SAVANTIC

Monolithic Construction With Built In Base-Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=4V,IC=3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP105/106/107

SEMIHOW

SemiHow Co.,Ltd.

SEMIHOW

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

CDIL

CDIL

CDIL

SILICON DARLINGTON POWER TRANSISTORS

NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. PNPcomplementsareTIP105-106-107 CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPN Plastic Medium-Power Silicon Transistors

Features •MountingTorgue:5in-lbsMaximum •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LowCollector-EmitterSaturati

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

CDIL

CDIL

CDIL

POWER TRANSISTORS(8A,60-100V,80W)

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

MOSPEC

MOSPEC

MOSPEC

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@30mAdc

MotorolaMotorola, Inc

摩托罗拉

Motorola

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)−

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPN SILICON POWER DARLINGTONS

●DesignedforComplementaryUsewithTIP105,TIP106andTIP107 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION TheTIP102isasiliconEpitaxial-BaseNPNpowertransistorinmonolithicDarlingtonconfigurationmountedinTO-220plasticpackage.Itisintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypeisTIP107. AlsoTIP105isaPNPtype. ■STMicroelectro

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Monolithic Construction With Built In Base- Emitter Shunt Resistors

•MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@Vce=4V,Ic=3A(Min.) •Collector-EmitterSustainingVoltage •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP105/106/107

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Power Darlingtons for Linear and Switching Applications

TIP100,101,102NPNPLASTICPOWERTRANSISTORS TIP105,106,107PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

TEL

TRANSYS Electronics Limited

TEL

isc Silicon NPN Darlington Power Transistor

DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=100V(Min) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=3A =2.5V

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Darlington Power Transistors (NPN)

DarlingtonPowerTransistors(NPN) Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant

TAITRON

TAITRON

TAITRON

NPN Plastic Medium-Power Silicon Transistors

Features •MountingTorgue:5in-lbsMaximum •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LowCollector-EmitterSaturati

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

Monolithic Construction With Built In Base-Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=4V,IC=3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP105/106/107

SEMIHOW

SemiHow Co.,Ltd.

SEMIHOW

Silicon NPN Darlington Power Transistors

DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCcurrentgain ·Lowcollectorsaturationvoltage ·ComplementtotypeTIP105/106/107 APPLICATIONS ·Forindustrialuse

SAVANTIC

Savantic, Inc.

SAVANTIC

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPN EPITAXIAL TRANSISTOR

DESCRIPTION TheUTCTIP102isdesignedforusingingeneralpurposeamplifierandswitchingapplications. FEATURES *LowVCE(SAT) *HighCurrentGain *ComplementarytoTIP107

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

CDIL

CDIL

CDIL

SILICON DARLINGTON POWER TRANSISTORS

NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. PNPcomplementsareTIP105-106-107 CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET

NPN Plastic Medium-Power Silicon Transistors

Features •MountingTorgue:5in-lbsMaximum •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LowCollector-EmitterSaturati

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPN EPITAXIAL TRANSISTOR

DESCRIPTION TheUTCTIP102isdesignedforusingingeneralpurposeamplifierandswitchingapplications. FEATURES *LowVCE(SAT) *HighCurrentGain *ComplementarytoTIP107

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL TRANSISTOR

DESCRIPTION TheUTCTIP102isdesignedforusingingeneralpurposeamplifierandswitchingapplications. FEATURES *LowVCE(SAT) *HighCurrentGain *ComplementarytoTIP107

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

CDIL

CDIL

CDIL

POWER TRANSISTORS(8A,60-100V,80W)

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

MOSPEC

MOSPEC

MOSPEC

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@30mAdc

MotorolaMotorola, Inc

摩托罗拉

Motorola

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)−

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PNP SILICON POWER DARLINGTONS

●DesignedforComplementaryUsewithTIP100,TIP101andTIP102 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION TheTIP102isasiliconEpitaxial-BaseNPNpowertransistorinmonolithicDarlingtonconfigurationmountedinTO-220plasticpackage.Itisintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypeisTIP107. AlsoTIP105isaPNPtype. ■STMicroelectro

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

PNP SILICON POWER DARLINGTONS

TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

TRSYS

Transys Electronics

TRSYS

TIP1产品属性

  • 类型

    描述

  • 型号

    TIP1

  • 功能描述

    达林顿晶体管 NPN Epitaxial Sil Darl

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2024-6-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
23+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
ST/意法
24+
TO-2-3
860000
明嘉莱只做原装正品现货
ST
23+
TO220
1000000
TIP122 TIP125 TIP126 TIP127 LM217 LM317 热卖 QQ 1304306553
CJ
22+
TO-220
6452
只做原装正品现货!或订货假一赔十!
ST/意法
22+
TO-220
10131
原装正品现货 可开增值税发票
FAIRCHILD/仙童
23+
TO-220
90000
只做原装 全系列供应 价格优势 可开增票
POWERINNOVAT
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
ST/意法
22+
TO-220
99221
终端免费提供样品 可开13%增值税发票
ST
22+
TO-220
32000
深圳宏捷佳只供全新原装,真实库存,原厂独立经销,含增值税价格优势!
ST
22+23+
TO-220
12790
全新原装正品,专业经销!可电联13925279453绝对原装正品全新进口深圳现货

TIP1芯片相关品牌

  • BANNER
  • CHEMI-CON
  • CTMICRO
  • JUXING
  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

TIP1数据表相关新闻