Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

PNP (HIGH DC CURRENT GAIN MIN

HGIH DC CURRENT GAIN MIN hFE=1000 @ VCE=-4V, Ic=-3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP100/101/102

Power Darlingtons for Linear and Switching Applications

TIP100, 101, 102 NPN PLASTIC POWER TRANSISTORS TIP105, 106, 107 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

PNP Plastic Medium-Power Silicon Transistors

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc • Low Collector-Emitter Saturation Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • TO-220 Compac

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. NPN complements are TIP100-101-102 Compliance to RoHS.

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE(sat) of 2.5 V at IC = 8 A

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP100/101/102 APPLICATIONS • For industrial use

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP100/101/102

Darlington Power Transistors (PNP)

Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

PNP SILICON POWER DARLINGTONS

TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP107. Also TIP105 is a PNP type. ■ STMicroelectro

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

互补硅功率达林顿晶体管

The TIP105 is a silicon Epitaxial-Base PNP transistor in monolithic Darlington configuration mounted in TO-220 plastic package intented for use in power linear and switching applications. \n\n The preferred complementary NPN type is the TIP102. • STMicroelectronics PREFERRED SALESTYPE \n• hFE CLASSIFICATION \n• INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE;

PNP SILICON POWER DARLINGTON TRANSISTOR

文件：119.14 Kbytes Page：5 Pages

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP DARL 60V 8A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP DARL 60V 8A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

达林顿三极管

中等功率双极型晶体管

Silicon PNP Darlington Power Transistors

文件：95.19 Kbytes Page：3 Pages

Silicon PNP Darlington Power Transistors

文件：134.01 Kbytes Page：3 Pages

TO-220 - Power Transistors and Darlingtons

文件：76.15 Kbytes Page：3 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：138.03 Kbytes Page：7 Pages

Silicon Power darlington Complementary transistors

文件：70.63 Kbytes Page：1 Pages

PNP Plastic Medium-Power Silicon Transistors

文件：331.46 Kbytes Page：4 Pages

Plastic Medium?뭁ower Complementary Silicon Transistors

文件：87.6 Kbytes Page：7 Pages

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

PNP SILICON POWER DARLINGTON TRANSISTOR

文件：119.14 Kbytes Page：5 Pages

PNP Plastic Medium-Power Silicon Transistors

文件：331.46 Kbytes Page：4 Pages

Plastic Medium?뭁ower Complementary Silicon Transistors

文件：87.6 Kbytes Page：7 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：138.03 Kbytes Page：7 Pages

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

Hybrid Power Module

The RF Line VHF Power Amplifier The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 volt supply and requires only 1.0 mW of RF input power. • Specified 7.5 Volt Characteristics: RF Input Power — 1.0 mW (0

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)