Plastic Medium−Power Complementary Silicon Transistors

Designed for general−purpose amplifier and low−speed switching applications.

Features

•High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc

•Collector−Emitter Sustaining Voltage − @ 30 mAdc

VCEO(sus)= 60 Vdc (Min) − TIP100, TIP105

= 80 Vdc (Min) − TIP101, TIP106

= 100 Vdc (Min) − TIP102, TIP107

•Low Collector−Emitter Saturation Voltage − VCE(sat)= 2.0 Vdc (Max) @ IC

= 3.0 Adc

= 2.5 Vdc (Max) @ IC= 8.0 Adc

•Monolithic Construction with Built−in Base−Emitter Shunt Resistors

•Pb−Free Packages are Available