Monolithic Construction With Built In Base- Emitter Shunt Resistors

• Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE =1000 @ V ce =4V, Ic =3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP105/106/107

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

Power Darlingtons for Linear and Switching Applications

TIP100, 101, 102 NPN PLASTIC POWER TRANSISTORS TIP105, 106, 107 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

NPN Plastic Medium-Power Silicon Transistors

Features • Mounting Torgue: 5 in-lbs Maximum • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc • Halogen free available upon request by adding suffix -HF • Low Collector-Emitter Saturati

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP105-106-107 Compliance to RoHS.

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP105/106/107

Darlington Power Transistors (NPN)

Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

NPN SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP105, TIP106 and TIP107 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE(sat) of 2.5 V at IC = 8 A

Silicon NPN Darlington Power Transistors

DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP105/106/107 APPLICATIONS ·For industrial use

Silicon NPN Darlington Power Transistors

文件：94.72 Kbytes Page：3 Pages

NPN Plastic Medium-Power Silicon Transistors

文件：249.28 Kbytes Page：4 Pages

NPN Plastic Medium-Power Silicon Transistors

文件：194.49 Kbytes Page：4 Pages

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 80V 8A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 80V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor

达林顿三极管

中等功率双极型晶体管

isc Silicon NPN Darlington Power Transistor

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Silicon Power darlington Complementary transistors

文件：70.63 Kbytes Page：1 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：138.03 Kbytes Page：7 Pages

Plastic Medium?뭁ower Complementary Silicon Transistors

文件：87.6 Kbytes Page：7 Pages

NPN Plastic Medium-Power Silicon Transistors

Features • Mounting Torgue: 5 in-lbs Maximum • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc • Halogen free available upon request by adding suffix -HF • Low Collector-Emitter Saturati

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

Plastic Medium-Power Complementary Silicon Transistors

文件：138.03 Kbytes Page：7 Pages

Plastic Medium?뭁ower Complementary Silicon Transistors

文件：87.6 Kbytes Page：7 Pages

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

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Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages