钛金系列FPGA

您仅有几平方毫米的空间，但需要尽可能增加计算能力。易灵思钛金系列FPGA可以提供这种能力。钛金系列FPGA采用16nm工艺制造，用最低功耗和较小的面积尺寸提供极高性能。\r\n\r\n它们具有Quantum™计算结构，并具有增强的计算能力，使钛金系列FPGA非常适合嵌入式硬件的加速应用。 它的逻辑单元（LE）密度范围从35K到1KK，并且与易灵思RISC-V SoC内核兼容，它们可以帮助您将微型芯片变成加速的嵌入式计算系统，适用于机器学习、神经网络、AIoT等领域。

包装：盒 描述：TERM BLK 18P SIDE ENTRY 5MM PCB 连接器，互连器件 线对板

包装：散装 描述：TERM BLK 18P SIDE ENTRY 5MM PCB 连接器，互连器件 线对板

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und