Filter specification

Measurement condition Ambient temperature: 23 °C Input power level: 0 dBm Terminating impedance: Input: 50 Ω Output: 50 Ω

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD745 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD745 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available

Integrated Circuit TV Video IF Amplifier

Description: The NTE746 is a monolithic integrated circuit in an 8–Lead DIP type package with wide–range AGC for replacement of 1st and 2nd IF stages in solid–state color and black and white TV sets. It will directly drive a 3rd IF stage. Features: • Center Frequency: FO = 45MHz • Ba

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitan