BD746C晶体管资料
BD746C别名：BD746C三极管、BD746C晶体管、BD746C晶体三极管
BD746C生产厂家：美国得克萨斯仪表公司
BD746C制作材料：Si-PNP
BD746C性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
BD746C封装形式：直插封装
BD746C极限工作电压：110V
BD746C最大电流允许值：20A
BD746C最大工作频率：<1MHZ或未知
BD746C引脚数：3
BD746C最大耗散功率：115W
BD746C放大倍数：
BD746C图片代号：B-62
BD746Cvtest：110
BD746Chtest：999900
- BD746Catest：20
BD746Cwtest：115
BD746C代换 BD746C用什么型号代替：BD250C3CK109D,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD746C | PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD745 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available | POINN |   | |
BD746C | Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD745/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications | SAVANTIC | | |
BD746C | Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD745/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications | ISC 无锡固电 | | |
BD746C | Silicon PNP Power Transistor 文件：138.37 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD746C | PNP SILICON POWER TRANSISTORS 文件：109.82 Kbytes Page：5 Pages | BOURNS 伯恩斯 | | |
BD746C | Trans GP BJT PNP 100V 20A 3-Pin(3+Tab) SOT-93 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
封装/外壳：TO-218-3 包装：管件 描述：TRANS PNP 100V 20A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD745 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
Integrated Circuit TV Video IF Amplifier Description: The NTE746 is a monolithic integrated circuit in an 8–Lead DIP type package with wide–range AGC for replacement of 1st and 2nd IF stages in solid–state color and black and white TV sets. It will directly drive a 3rd IF stage. Features: • Center Frequency: FO = 45MHz • Ba | NTE | | ||
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re | POLYFET | | ||
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitan | POLYFET | |
BD746C产品属性
- 类型
描述
- Configuration：
Single
- Material：
Si
- Maximum Collector Base Voltage：
110V
- Maximum Collector Emitter Saturation Voltage：
\\1@0.5A@5A3@5A@20A\\
- Maximum Collector Emitter Voltage：
100V
- Maximum DC Collector Current：
20A
- Maximum Emitter Base Voltage：
5V
- Maximum Operating Temperature：
150°C
- Maximum Power Dissipation：
115000mW
- Type：
PNP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Bourns Inc. |
25+ |
SOT-93 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
INTEL |
2026+ |
BGA |
950 |
原装正品 假一罚十! |
|||
INTEL/英特尔 |
24+ |
BGA |
8540 |
只做原装正品现货或订货假一赔十! |
|||
ST |
24+ |
TO-218 |
15000 |
原装现货热卖 |
|||
POWER INNOVATIONS |
2023+ |
SMD |
19326 |
安罗世纪电子只做原装正品货 |
|||
Rohm Semiconductor |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
||||
Bourns Inc. |
25+ |
SOT-93 |
20948 |
样件支持,可原厂排单订货! |
|||
INTEL/英特尔 |
2402+ |
FCBGA |
8324 |
原装正品!实单价优! |
|||
INTEL |
24+ |
BGA |
5000 |
全新原装正品,现货销售 |
|||
24+ |
TO-3PN |
10000 |
全新 |
BD746C芯片相关品牌
BD746C规格书下载地址
BD746C参数引脚图相关
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- BD738
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- BD735
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DdatasheetPDF页码索引
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