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BD746C晶体管资料

  • BD746C别名:BD746C三极管、BD746C晶体管、BD746C晶体三极管

  • BD746C生产厂家:美国得克萨斯仪表公司

  • BD746C制作材料:Si-PNP

  • BD746C性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • BD746C封装形式:直插封装

  • BD746C极限工作电压:110V

  • BD746C最大电流允许值:20A

  • BD746C最大工作频率:<1MHZ或未知

  • BD746C引脚数:3

  • BD746C最大耗散功率:115W

  • BD746C放大倍数

  • BD746C图片代号:B-62

  • BD746Cvtest:110

  • BD746Chtest:999900

  • BD746Catest:20

  • BD746Cwtest:115

  • BD746C代换 BD746C用什么型号代替:BD250C3CK109D,

型号 功能描述 生产厂家 企业 LOGO 操作
BD746C

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD745/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications

ISC

无锡固电

BD746C

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD745 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available

POINN

BD746C

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD745/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications

SAVANTIC

BD746C

Silicon PNP Power Transistor

文件:138.37 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD746C

PNP SILICON POWER TRANSISTORS

文件:109.82 Kbytes Page:5 Pages

BOURNS

伯恩斯

BD746C

Trans GP BJT PNP 100V 20A 3-Pin(3+Tab) SOT-93

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:TO-218-3 包装:管件 描述:TRANS PNP 100V 20A SOT93 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD745 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available

POINN

Integrated Circuit TV Video IF Amplifier

Description: The NTE746 is a monolithic integrated circuit in an 8–Lead DIP type package with wide–range AGC for replacement of 1st and 2nd IF stages in solid–state color and black and white TV sets. It will directly drive a 3rd IF stage. Features: • Center Frequency: FO = 45MHz • Ba

NTE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitan

POLYFET

BD746C产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Base Voltage:

    110V

  • Maximum Collector Emitter Saturation Voltage:

    \\1@0.5A@5A3@5A@20A\\

  • Maximum Collector Emitter Voltage:

    100V

  • Maximum DC Collector Current:

    20A

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    115000mW

  • Type:

    PNP

更新时间:2026-7-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Bourns Inc.
25+
SOT-93
20948
样件支持,可原厂排单订货!
Bourns Inc.
25+
SOT-93
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
BOURNS
23+
227
ST
24+
TO-218
15000
原装现货热卖
24+
TO-3PN
10000
全新
恩XP
22+
TO-3P
6000
十年配单,只做原装
ST/意法
23+
TO-3P
117856
原厂授权代理,海外优势订货渠道。可提供大量库存,详
POWER INNOVATIONS
2023+
SMD
19326
安罗世纪电子只做原装正品货
恩XP
22+
TO-3P
92594
bourns
25+
500000
行业低价,代理渠道

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