SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

VDMOS SHORTFORM S1

0.5V 至 100V 智能旁路二极管

SM74611 是一款面向光伏应用的智能旁路二极管。 该二极管可为正常工作期间被遮蔽的部分光伏板提供另外一条线串电流路径。 如果没有旁路二极管，被遮蔽单元会因反向偏置单元功耗过大而呈现为过热点。 目前采用传统的 P-N 结二极管或肖特基二极管来缓解这一问题。 遗憾的是，此类二极管的正向电压仍偏高（普通二极管约为 0.6V，而肖特基二极管为 0.4V）。 当流过二极管的电流为 10A 时，功耗会高达 6W。这会导致二极管所在接线盒的内部温度升高并降低模块可靠性。 SM74611 的优势在于，正向压降比 P-N 结二极管和肖特基二极管低。 该二极管在 8A 电流下的平均正向压降典型值为 26mV。 • 最低反向电压 (VR)：30V\n• 正向工作电流 (IF)：高达 15A\n• 低平均正向电压：8A 时为 26mV\n• 功耗比肖特基二极管低 \n• 泄漏电流比肖特基二极管低\n• 与传统的 D2PAK 肖特基二极管封装和引脚兼容\n• 工作温度范围 (Tj)：-40°C 至 125°C;

RF POWER VDMOS TRANSISTOR

文件：42.85 Kbytes Page：2 Pages

SOT-23 Precision Micropower Series Voltage Reference

文件：321.86 Kbytes Page：14 Pages

SOT-23 Precision Micropower Series Voltage Reference

Smart Bypass Diode

文件：709.81 Kbytes Page：11 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE GEN PURP 30V 15A DDPAK 分立半导体产品 二极管 - 整流器 - 单

Smart Bypass Diode

文件：709.81 Kbytes Page：11 Pages

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD745 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD745 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available

Integrated Circuit TV Video IF Amplifier

Description: The NTE746 is a monolithic integrated circuit in an 8–Lead DIP type package with wide–range AGC for replacement of 1st and 2nd IF stages in solid–state color and black and white TV sets. It will directly drive a 3rd IF stage. Features: • Center Frequency: FO = 45MHz • Ba

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitan