Axial Leaded Aluminum Electrolytic Capacitors

85 ºC, High Ripple, General Purpose Capacitor Type TC is an axial leaded, 85 ºC, 1000 hour long life general purpose aluminum electrolytic capacitor with a high ripple current rating and is suitable for consumer electronic equipment applications. Highlights • General purpose • High ripple curr

封装/外壳：轴向，CAN 包装：散装 描述：CAP ALUM 100UF 450V AXIAL 电容器 铝电解电容器

Axial Leaded Aluminum Electrolytic Capacitors

85 ºC, High Ripple, General Purpose Capacitor Type TC is an axial leaded, 85 ºC, 1000 hour long life general purpose aluminum electrolytic capacitor with a high ripple current rating and is suitable for consumer electronic equipment applications. Highlights • General purpose • High ripple curr

16Pin infrared remote control IC

文件：293.16 Kbytes Page：33 Pages

16PIN红外线遥控IC

16PIN红外线遥控IC

16Pin infrared remote control IC

文件：293.16 Kbytes Page：33 Pages

烟雾探测器

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)