位置：首页 > IC中文资料第114页 > TC551001BF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
131,072 WORD x 8 BIT STATIC RAM 文件：547.34 Kbytes Page：14 Pages | TOSHIBA 东芝 |   | ||
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBA 东芝 | | ||
131,072 WORD x 8 BIT STATIC RAM 文件：588.48 Kbytes Page：14 Pages | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBA 东芝 | | ||
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBA 东芝 | | ||
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBA 东芝 | | ||
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBA 东芝 | | ||
131,072 WORD x 8 BIT STATIC RAM Description The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur- rent of 5mA/MHz (typ.) and a minimum | TOSHIBA 东芝 | | ||
131,072 WORD x 8 BIT STATIC RAM Description The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur- rent of 5mA/MHz (typ.) and a minimum | TOSHIBA 东芝 | |
TC551001BF产品属性
- 类型
描述
- 型号
TC551001BF
- 制造商
Toshiba America Electronic Components
- 功能描述
Static RAM, 128Kx8, 32 Pin, Plastic, SOP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
25+ |
SOP32 |
12496 |
TOSHIBA/东芝原装正品TC551001CF-70L即刻询购立享优惠#长期有货 |
|||
CYPRESS/赛普拉斯 |
25+ |
DIP |
13800 |
原装,请咨询 |
|||
TOSHIBA/东芝 |
2025+ |
DIP |
5000 |
原装进口,免费送样品! |
|||
TOSHIBA/东芝 |
专业军工 |
PDIP |
860 |
只做原装正品现货授权货源 |
|||
TOSHIBA |
25+ |
SOP32 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
TOSHIBA |
24+ |
SOP32 |
7320 |
绝对原装现货,价格低,欢迎询购! |
|||
TOSHIBA |
24+ |
DIP |
8000 |
只做原装正品现货 |
|||
TOS |
20+ |
TSOP |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
|||
CYPRESS/赛普拉斯 |
23+ |
DIP |
98900 |
原厂原装正品现货!! |
|||
TOSHIBA/东芝 |
9905+ |
SOP32 |
3268 |
原装正品 可含税交易 |
TC551001BF规格书下载地址
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DdatasheetPDF页码索引
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