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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
131,072WORDx8BITSTATICRAM 文件：547.34 Kbytes Page：14 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  |   | |
SILICONGATECMOS131,072WORDx8BITSTATICRAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072WORDx8BITSTATICRAM 文件：588.48 Kbytes Page：14 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072-WORDBY8-BITSTATICRAM DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SILICONGATECMOS131,072WORDx8BITSTATICRAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SILICONGATECMOS131,072WORDx8BITSTATICRAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SILICONGATECMOS131,072WORDx8BITSTATICRAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SILICONGATECMOS131,072WORDx8BITSTATICRAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
TC551001BF产品属性
- 类型
描述
- 型号
TC551001BF
- 制造商
Toshiba America Electronic Components
- 功能描述
Static RAM, 128Kx8, 32 Pin, Plastic, SOP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
东芝|Toshiba |
20+ |
SOP32 |
6588 |
||||
TOS |
20+ |
TSOP |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
|||
TOS |
20+ |
SOP32 |
2960 |
诚信交易大量库存现货 |
|||
TOSHIBA |
22+ |
SOP |
8200 |
原装现货库存.价格优势 |
|||
TOSHIBA |
22+ |
SOP32 |
3000 |
原装正品,支持实单 |
|||
TOSHIBA |
2025+ |
TSOP-32 |
32560 |
原装优势绝对有货 |
|||
TOSHIBA/东芝 |
25+ |
SOP32 |
12496 |
TOSHIBA/东芝原装正品TC551001CF-70L即刻询购立享优惠#长期有货 |
|||
TOSHIBA/东芝 |
24+ |
PDIP |
1235 |
全部原装现货优势产品 |
|||
TOSHIBA/东芝 |
专业军工 |
PDIP |
860 |
只做原装正品现货授权货源 |
|||
24+ |
SOP |
9 |
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TC551001BF规格书下载地址
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DdatasheetPDF页码索引
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