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型号	功能描述	生产厂家&企业
TC551001	131,072WORDx8BITSTATICRAM 文件：547.34 Kbytes Page：14 Pages	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001	131,072WORDx8BITSTATICRAM 文件：588.48 Kbytes Page：14 Pages	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001	SILICONGATECMOS131,072WORDx8BITSTATICRAM 文件：584.22 Kbytes Page：13 Pages	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFI	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFI	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFI-10	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFI-10L	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFI-85	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFI-85L	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL-10	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL-10L	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL-10LT	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL-10LV	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL-70	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL-70L	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL-70LT	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL-70LV	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL-85	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL-85L	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL-85LT	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFL-85LV	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTI	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTI	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTI-10	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTI-10L	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTI-85	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTI-85L	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL-10	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL-10L	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL-10LT	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL-10LV	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL-70	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL-70L	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL-70LT	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL-70LV	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL-85	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL-85L	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL-85LT	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001AFTL-85LV	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001API	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001API	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001API-10	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001API-10L	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001API-85	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001API-85L	131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001APL	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001APL	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001APL-10	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001APL-10L	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001APL-10LT	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001APL-10LV	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001APL-70	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001APL-70L	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001APL-70LT	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001APL-70LV	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
TC551001APL-85	131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum	TOSHIBAToshiba Semiconductor 东芝株式会社东芝

TC551001产品属性

类型
描述
型号
TC551001
制造商
TOSHIBA
制造商全称
Toshiba Semiconductor
功能描述
131,072 WORD x 8 BIT STATIC RAM

TC551001供应商更多...

更新时间：2025-7-13 8:50:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
天津市博通航睿技术有限公司	TC551001AFI-85L	TOSHIBA	23+	SOP32	7000		询价
深圳市羿芯诚电子有限公司	TC551001CFT-70L	TOS	20+	TSOP	2860	原厂原装正品价格优惠公司现货欢迎查询	询价
深圳市欧立现代科技有限公司	TC551001CF-70L	TOSHIBA	24+	SOP32	7320	绝对原装现货,价格低,欢迎询购!	询价
深圳市胜彬电子有限公司	TC551001AFI-10L	TOSHIBA	22+	SOP32	3000	原装正品,支持实单	询价
深圳市金嘉锐电子有限公司	TC551001CTR-70L	TOSHIBA	2025+	TSOP-32	32560	原装优势绝对有货	询价
瀚佳科技(深圳)有限公司	TC551001AFL-10	TOSHIBA	24+	SOP32	35200	一级代理/放心采购	询价
深圳市卓越微芯电子有限公司	TC551001BFI-85L	TOSHIBA	2020+	SOP32	18600	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市弘为电子有限公司	TC551001CFI-85L	TOSHIBA	24+	SOP32	2000	原装现货假一罚十	询价
深圳深宇韬电子科技有限公司	TC551001CFI-85L	TOSHIBA/東芝	21+	SOP	7000	正品渠道现货,终端可提供BOM表配单。	询价
深圳市英卓尔科技有限公司	TC551001AFI-10L	TOS	20+	SOP32	2960	诚信交易大量库存现货	询价

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TC4452VPA,全新.当天发货0755-82732291当天发货或门市自取.企鹅：一七五五二三二五七五/企鹅：一一五七六一一五八五，威:八七六八零五五八.
2021-5-31
TC4452VOA
TC4452VOA,全新.当天发货0755-82732291当天发货或门市自取.企鹅：一七五五二三二五七五/企鹅：一一五七六一一五八五，威:八七六八零五五八.
2021-5-31
TC58CVG2S0HRAIJ
原装现货
2020-10-15

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DdatasheetPDF页码索引