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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TC551001 | 131,072WORDx8BITSTATICRAM 文件：547.34 Kbytes Page：14 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   |
TC551001 | 131,072WORDx8BITSTATICRAM 文件：588.48 Kbytes Page：14 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
TC551001 | SILICONGATECMOS131,072WORDx8BITSTATICRAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITSTATICRAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
TC551001产品属性
- 类型
描述
- 型号
TC551001
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
131,072 WORD x 8 BIT STATIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
21+ |
SOP32 |
35200 |
一级代理/放心采购 |
|||
TOSHIBA/东芝 |
22+ |
TSOP32 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
|||
TOSHIBA |
22+ |
DIP |
8000 |
只做原装正品现货 |
|||
TOSHIBA |
SOP |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
TOSHIBA |
22+ |
SOP32 |
3000 |
原装正品,支持实单 |
|||
TOSHIBA/东芝 |
2024+实力库存 |
SOP |
100 |
只做原厂渠道 可追溯货源 |
|||
TOSHIBA |
9,818 |
SOP |
89 |
全新原装!优势库存热卖中! |
|||
TOSHIBA |
2022 |
SOP |
5280 |
原厂原装正品,价格超越代理 |
|||
TOSHIBA |
22+ |
SOP |
8200 |
原装现货库存.价格优势 |
|||
TOSHIBA |
23+ |
SOP |
2700 |
现货库存,全新原装,特价销售 |
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- TC54VN6002ECBRTP
- TC54VN6002ECB
- TC54VN
- TC54VC
- TC54256
- TC54_11
- TC54_07
- TC54_04
- TC534
- TC533
- TC53257
- TC530
- TC52A
- TC5299J
- TC5285C
- TC5282C
- TC520A
- TC520
- TC52_15
- TC52_13
- TC51V
TC551001数据表相关新闻
TC51N2702ECBTR
TC51N2702ECBTR
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TC58NVG0S3ETA00原装现货特价销售
2022-10-27TC58DVG3S0ETA00
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2021-6-22TC4452VPA
TC4452VPA,全新.当天发货0755-82732291当天发货或门市自取.企鹅：一七五五二三二五七五/企鹅：一一五七六一一五八五，威:八七六八零五五八.
2021-5-31TC4452VOA
TC4452VOA,全新.当天发货0755-82732291当天发货或门市自取.企鹅：一七五五二三二五七五/企鹅：一一五七六一一五八五，威:八七六八零五五八.
2021-5-31TC58CVG2S0HRAIJ
原装现货
2020-10-15
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