131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

131,072 WORD x 8 BIT STATIC RAM

文件：547.34 Kbytes Page：14 Pages

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

文件：584.22 Kbytes Page：13 Pages

131,072 WORD x 8 BIT STATIC RAM

文件：588.48 Kbytes Page：14 Pages

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

文件：584.22 Kbytes Page：13 Pages

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

文件：584.22 Kbytes Page：13 Pages

131,072 WORD x 8 BIT STATIC RAM

Description The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur- rent of 5mA/MHz (typ.) and a minimum

131,072 WORD x 8 BIT STATIC RAM

Description The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur- rent of 5mA/MHz (typ.) and a minimum