Features

• Maximum junction temperature: TJ = 175 °C

• 5 μs of short-circuit withstand time

• Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A

• Tight parameter distribution

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Very fast recovery antiparallel diode

Description

This device is IGBT developed using an advanced proprietary trench gate fieldstop

structure. This device is part of the H series of IGBTs, which represent

an optimum compromise between conduction and switching losses to maximize

the efficiency of high switching frequency converters. Moreover, a slightly positive

VCE(sat) temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Applications

• UPS

• Solar inverters

• Welding

• PFC