Features

• AEC-Q101 qualified

• 6 μs of short-circuit withstand time

• VCE(sat) = 1.65 V (typ.) @ IC = 120 A

• Tight parameter distribution

• Safer paralleling

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Soft and very fast recovery antiparallel diode

• Maximum junction temperature: TJ = 175 °C

Applications

• Heating system

• HV battery disconnect and fire-off system

• Main inverter (electric traction)

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss

and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.