Features

• Maximum junction temperature: TJ = 175 °C

• 10 μs of short-circuit withstand time

• Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A

• Tight parameter distribution

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Soft- and fast-recovery antiparallel diode

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss

and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.

Applications

• Industrial drives

• UPS

• Solar inverters

• General purpose inverter