Quad SPST JFET Analog Switch

GENERAL DESCRIPTION The SW06 is a four channel single-pole, single-throw analog switch that employs both bipolar and ion-implanted FET devices. The SW06 FET switches use bipolar digital logic inputs which are more resistant to static electricity than CMOS devices. Ruggedness and reliability are

Quad SPST JFET Analog Switch

丝印代码：SW068R08ET；N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 7.1mΩ)@VGS=10V  Low Gate Charge (Typ59nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: Synchronous Rectification,Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced tec

丝印代码：SW065R68E7T；N-channel Enhanced mode TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 75nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced technol

丝印代码：SW068R08ET；N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 7.1mΩ)@VGS=10V  Low Gate Charge (Typ59nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: Synchronous Rectification,Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced tec

Wire Wound Chip Inductors

• 1. Tolerance : G = ±2% , J = ±5% , K = ±10%,2. L ,Q , SRF : Agilent/HP E4991A+Agilent/HP16197A,    (The electrical specification test by the smallest gap position) or HP16193A,3. Rdc : DIGITAL MILLIOHM METER Chroma 16502, or equivalent.,4. lrms for a 15℃ rise above 25℃ ambient.,5. Oper;

Wire Wound Chip Inductors

• 1. Tolerance : G = ±2% , J = ±5% , K = ±10%,2. L ,Q , SRF : Agilent/HP E4991A+Agilent/HP16197A,    (The electrical specification test by the smallest gap position) or HP16193A,3. Rdc : DIGITAL MILLIOHM METER Chroma 16502, or equivalent.,4. lrms for a 15℃ rise above 25℃ ambient.,5. Oper;

N-channel Enhanced mode TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 75nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced technol

N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 7.1mΩ)@VGS=10V  Low Gate Charge (Typ59nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: Synchronous Rectification,Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced tec

Quad SPST JFET Analog Switch

GENERAL DESCRIPTION The SW06 is a four channel single-pole, single-throw analog switch that employs both bipolar and ion-implanted FET devices. The SW06 FET switches use bipolar digital logic inputs which are more resistant to static electricity than CMOS devices. Ruggedness and reliability are

Quad SPST JFET Analog Switch

GENERAL DESCRIPTION The SW06 is a four channel single-pole, single-throw analog switch that employs both bipolar and ion-implanted FET devices. The SW06 FET switches use bipolar digital logic inputs which are more resistant to static electricity than CMOS devices. Ruggedness and reliability are

Quad SPST JFET Analog Switch

GENERAL DESCRIPTION The SW06 is a four channel single-pole, single-throw analog switch that employs both bipolar and ion-implanted FET devices. The SW06 FET switches use bipolar digital logic inputs which are more resistant to static electricity than CMOS devices. Ruggedness and reliability are

Quad SPST JFET Analog Switch

GENERAL DESCRIPTION The SW06 is a four channel single-pole, single-throw analog switch that employs both bipolar and ion-implanted FET devices. The SW06 FET switches use bipolar digital logic inputs which are more resistant to static electricity than CMOS devices. Ruggedness and reliability are

Quad SPST JFET Analog Switch

GENERAL DESCRIPTION The SW06 is a four channel single-pole, single-throw analog switch that employs both bipolar and ion-implanted FET devices. The SW06 FET switches use bipolar digital logic inputs which are more resistant to static electricity than CMOS devices. Ruggedness and reliability are

N-channel Enhanced mode SOP-8 MOSFET

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N-channel Enhanced mode TO-251/DFN5*6 MOSFET

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N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET

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丝印代码：DPAK；isc N-Channel MOSFET Transistor

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