Features

 High ruggedness

 Low RDS(ON) (Typ 6.3mΩ)@VGS=10V

 Low Gate Charge (Typ 75nC)

 Improved dv/dt Capability

 100 Avalanche Tested

 Application:Synchronous Rectification, Li Battery Protect Board, Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics,

including fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics.