位置：SWB068R08ET > SWB068R08ET详情
SWB068R08ET中文资料
SWB068R08ET数据手册规格书PDF详情
Features
High ruggedness
Low RDS(ON)(Typ 7.1mΩ)@VGS=10V
Low Gate Charge (Typ59nC)
Improved dv/dt Capability
100 Avalanche Tested
Application: Synchronous Rectification,Li Battery Protect Board, Inverter
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
更新时间：2025-10-31 11:06:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
73000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Samwin(芯派) |
23+ |
TO-263 |
483 |
三极管/MOS管/晶体管 > 场效应管(MOSFET) |
|||
Sage Millmeter |
24+ |
模块 |
400 |
||||
3M |
2022+ |
16 |
全新原装 货期两周 |
||||
COILCRAFT |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
COILCRAFT |
24+ |
con |
2500 |
优势库存,原装正品 |
SWB068R08ET 资料下载更多...
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Datasheet数据表PDF页码索引
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