isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=30A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 30mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S), 175 DegreeCelcious MOSFET

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N-Channel Enhancement-Mode Trans

30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

30V N-Channel Power

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on

N-Channel 30-V (D-S) MOSFET

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30A竊?0V N-CHANNEL MOSFET

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N-Channel 30-V (D-S) MOSFET

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