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型号 功能描述 生产厂家 企业 LOGO 操作
SUB75N08

isc N-Channel MOSFET Transistor

文件:373.06 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-Channel 75-V (D-S), 175C MOSFET

文件:90.04 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 75-V (D-S) 175C MOSFET

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode Trans

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET

文件:59.66 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

75V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FAIRCHILD

仙童半导体

75V N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

FAIRCHILD

仙童半导体

N-Channel MOSFET

General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch m

WISDOM

55 AMP (note 1) /75 Volts 8.5 mO N-Channel Trench Gate MOSFET

文件:43.11 Kbytes Page:2 Pages

SSDI

N-Channel 75-V (D-S), 175C MOSFET

文件:90.04 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

SUB75N08产品属性

  • 类型

    描述

  • 型号

    SUB75N08

  • 功能描述

    MOSFET 75V 75A 250W

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-24 23:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
24+
D2PAK(TO-263)
16800
绝对原装进口现货 假一赔十 价格优势!?
VIS
25+23+
TO-263
28098
绝对原装正品全新进口深圳现货
VISHAY/威世
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
VISHAY/威世
08+
TO-263
348
VISHAY
26+
TO-263
19567
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
VISHAY
25+
513
公司优势库存 热卖中!
Vishay
17+
TO-263
6200
24+
N/A
1057
VISHAY
18+
TO-263
85600
保证进口原装可开17%增值税发票
VISHAY/威世
22+
TO-263
20000
只做原装 品质保障

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