位置：首页 > IC中文资料第6637页 > SUB75N08-10
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SUB75N08-10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
SUB75N08-10 | N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET 文件：59.66 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET 文件：59.66 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
N-Channel 80 V (D-S) MOSFET 文件：973.53 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | |
SUB75N08-10产品属性
- 类型
描述
- 型号
SUB75N08-10
- 功能描述
MOSFET 75V 75A 187W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
5890 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY/威世 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY |
05+ |
TO-263 |
3531 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
2016+ |
TO-263 |
6528 |
房间原装进口现货假一赔十 |
|||
VISHAY/威世 |
22+ |
TO-263 |
12500 |
原装正品支持实单 |
|||
VISHAY |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
VISHAY |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY/威世 |
05+ |
TO-263 |
3531 |
||||
VISHAY/威世 |
23+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
|||
VISHAY/威世 |
24+ |
TO-263 |
501562 |
免费送样原盒原包现货一手渠道联系 |
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DdatasheetPDF页码索引
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