位置：首页 > IC中文资料第516页 > SUB70N03
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized 文件：48 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel 30-V (D-S) 175C MOSFET PWM Optimized | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized 文件：73.29 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel 30-V (D-S) 175C MOSFET PWM Optimized | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Enhancement-Mode MOSFET Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency | GE | | ||
N-Channel Enhancement Mode Power MOSFET 文件：453.02 Kbytes Page：5 Pages | ANACHIP 易亨电子 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：453.02 Kbytes Page：5 Pages | ANACHIP 易亨电子 | | ||
N-Channel Enhancement-Mode MOSFET 文件：92.95 Kbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs 文件：142.9 Kbytes Page：16 Pages | INTERSIL | |
SUB70N03产品属性
- 类型
描述
- 型号
SUB70N03
- 功能描述
MOSFET 30V 70A 93W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+ |
TO-263 |
35200 |
一级代理/放心采购 |
|||
VISHAY |
2016+ |
TO263 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VIS |
25+23+ |
TO-263 |
14868 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
24+ |
TSSOP14 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
VISHAY |
25+ |
TO263 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
VISHAY |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
|||
VISHAY |
26+ |
原厂原封装 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
VISHAY |
23+ |
TO-263 |
5000 |
原装正品,假一罚十 |
|||
SILICONIX |
25+ |
TO263 |
693 |
全新原装正品支持含税 |
|||
VISHAY |
24+ |
TO-263 |
536 |
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SUB70N03规格书下载地址
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DdatasheetPDF页码索引
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