位置：首页 > IC中文资料第516页 > SUB70N03-09P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SUB70N03-09P | N-Channel30-V(D-S),175C,MOSFETPWMOptimized 文件：73.29 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 |  |   |
N-Channel30-V(D-S),175C,MOSFETPWMOptimized 文件：48 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·FastSwitchingSpeed ·100avalanchetested APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·Highcurrentswitchingapplications ·DC-DCconverterandmotordriveapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-Channel30-V(D-S),175-LCMOSFET 文件：65.82 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
N-Channel30-V(D-S),175C,MOSFETPWMOptimized 文件：48 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | |
SUB70N03-09P产品属性
- 类型
描述
- 型号
SUB70N03-09P
- 功能描述
MOSFET 30V 70A 93W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
V |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
|||
VBSEMI |
19+ |
TO-263 |
29600 |
绝对原装现货,价格优势! |
|||
SILICON |
22+ |
TO263 |
4897 |
绝对原装!现货热卖! |
|||
VISHAY |
21+ |
TO-263 |
35200 |
一级代理/放心采购 |
|||
VISHAY/威世 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,绝对原装 假一罚十 |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SILICON |
23+ |
TO263 |
5000 |
原装正品,假一罚十 |
|||
SILICON |
2020+ |
SOT-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Vishay |
2316+ |
TO-263 |
3866 |
优势代理渠道,原装现货,可全系列订货 |
|||
VISHAY |
22+ |
TO-263 |
28600 |
只做原装正品现货假一赔十一级代理 |
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SUB70N03-09P规格书下载地址
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DdatasheetPDF页码索引
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