N-Channel 60-V (D-S), 175C MOSFET

N-Channel 60-V (D-S), 175°C MOSFET 175 °C Rated Maximum Junction Temperature TrenchFET® Power MOSFETs Product Summary    V(BR)DSS   60 V    rDS(on)    0.018 Ω    ID         60 A

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 60-V (D-S) MOSFET

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N-Channel Enhancement-Mode Trans

N-Channel Enhancement Mode Power MOSFET

Description The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

60 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty

60A, 60V N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

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N-Channel 60-V (D-S) MOSFET

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