位置：首页 > IC中文资料第1492页 > SUB60N06-18
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SUB60N06-18 | N-Channel 60-V (D-S), 175C MOSFET N-Channel 60-V (D-S), 175°C MOSFET 175 °C Rated Maximum Junction Temperature TrenchFET® Power MOSFETs Product Summary V(BR)DSS 60 V rDS(on) 0.018 Ω ID 60 A | VishayVishay Siliconix 威世科技 |   | |
SUB60N06-18 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
SUB60N06-18 | N-Channel 60-V (D-S) MOSFET 文件：883.99 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
SUB60N06-18 | N-Channel Enhancement-Mode Trans | VishayVishay Siliconix 威世科技 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：277.1 Kbytes Page：2 Pages | ISC 无锡固电 | |
SUB60N06-18产品属性
- 类型
描述
- 型号
SUB60N06-18
- 功能描述
MOSFET 60V 60A 120W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
9338 |
原厂直销,现货供应,账期支持! |
|||
VISHAY |
NEW |
TO-263 |
19567 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
SIL |
22+ |
SOT263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
24+ |
TO-263 |
501564 |
免费送样原盒原包现货一手渠道联系 |
|||
VISHAY/威世 |
24+ |
TO-263 |
20000 |
只做原厂渠道 可追溯货源 |
|||
VBsemi |
24+ |
TO263 |
11000 |
假一赔百原装正品价格优势实单可谈 |
|||
Vishay |
17+ |
TO-263 |
6200 |
||||
VISHAY |
24+ |
TO-263 |
8866 |
||||
VISHAY |
24+ |
D2PAK(TO-263) |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
VISHAY |
18+ |
TO-263 |
85600 |
保证进口原装可开17%增值税发票 |
SUB60N06-18规格书下载地址
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DdatasheetPDF页码索引
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