位置：首页 > IC中文资料第1492页 > SUB60N06-18
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SUB60N06-18 | N-Channel 60-V (D-S), 175C MOSFET N-Channel 60-V (D-S), 175°C MOSFET 175 °C Rated Maximum Junction Temperature TrenchFET® Power MOSFETs Product Summary V(BR)DSS 60 V rDS(on) 0.018 Ω ID 60 A | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
SUB60N06-18 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
SUB60N06-18 | N-Channel 60-V (D-S) MOSFET 文件：883.99 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：277.1 Kbytes Page：2 Pages | ISC 无锡固电 | |
SUB60N06-18产品属性
- 类型
描述
- 型号
SUB60N06-18
- 功能描述
MOSFET 60V 60A 120W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
TO-263 |
20000 |
只做原厂渠道 可追溯货源 |
|||
VISHAY/威世 |
23+ |
TO-263 |
8000 |
只做原装现货 |
|||
VBSEMI/台湾微碧 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
Vishay |
2024+ |
D2PAK(TO-263 |
50000 |
原装现货 |
|||
1844+ |
SOT363 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
||||
SILICONIX |
24+ |
TO-263 |
1450 |
只做原装正品 |
|||
VBsemi |
21+ |
TO263 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VBsemi |
24+ |
TO263 |
11000 |
假一赔百原装正品价格优势实单可谈 |
|||
V |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY/威世 |
24+ |
TO-263 |
501564 |
免费送样原盒原包现货一手渠道联系 |
SUB60N06-18规格书下载地址
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DdatasheetPDF页码索引
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